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High Efficiency 1060nm VCSELs for Low Power Consumption" and "Optical Absorption Coefficient of Carbon-doped GaAs Epitaxial Layer by Means of Propagation-Loss Measurement of Waveguide for Long Wavelength VCSEL

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What
  • Visitor Seminars
When May 15, 2009
from 03:00 PM to 03:00 PM
Where Engr IV Room 57-124
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Takeo Kageyama
Photonic Device Laboratory, Furukawa Electric, Japan

Friday, May 15, 2009 at 3:00pm
Engr IV Room 57-124

Abstract
High efficiency Vertical-Cavity Surface-Emitting Lasers (VCSELs) will be reviewed in terms of power conversion efficiency. Other lasing parameters will be also discussed. The optical absorption coefficient (?) for carbon-doped GaAs epitaxial layer by CBr4 with doping range from 1018 to 1020 cm-3 was measured for the first time. Obtained αGaAs:C was 2-times larger than αGaAs:Zn at 1300nm.

Biography
Takeo Kageyama received M.E. and Ph.D. in 1999 and 2001, respectively, from Tokyo Institute of Technology. During his Ph.D. work, he studied chemical beam epitaxy of 1300nm-range GaInNAs VCSELs. From August 2001 to February 2003, he joined Bandwidth9 Inc. at Fremont, CA, as a senior engineer, working on MEMS-based 1550nm tunable-VCSELs using tunnel-junction grown by MBE. From April 2003 to July 2003, he joined P&I lab, Tokyo institute of Technology as a post-doctoral scientist, 1200nm-range highly strained GaInAsSb quantum well lasers. From August 2003, he joined Furukawa Electric Co. Ltd., Yokohama Research and Development Laboratories. He is currently working on the development of the design, growth, processing and characterization on 1300nm-range GaInNAsSb-VCSELs and 1060nm-range InGaAs-VCSELs.

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