Modeling Indirect Tunneling in Silicon
Sep 22, 2010
from 02:00 PM to 03:00 PM
|Where||Engr IV Maxwell Room 57-124|
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Advisor: Dee-Son Pan
Wednesday, September 22, 2010 at 2:00pm
Engr IV Maxwell Room 57-124
Indirect tunneling in silicon p-n junctions catches people's attention again in recent years. First, the phenomenon induces a serious leakage problem, so called gate-induced drain leakage (GIDL) effect, in modern metal-oxide-semiconductor field-effect transistors (MOSFETs). Second, it is utilized to develop a novel tunneling transistor with the sharp turn-on ability for continuing ITRS roadmap. Although the indirect tunneling is important for the state-of-the-art transistor-technology, the accuracy of the present tunneling models in technology computer-aided design (TCAD) tools is still vague. In the research work, the theory of indirect tunneling in silicon has been thoroughly studied. The phonon-assisted tunneling model has been developed and compared with the existed ones in the Sentaurus-Synopsys, Medici-Synopsys, and Atlas-Silvaco TCAD tools. Beyond these existed models, ours successfully predicts the indirect tunneling current under the different field direction in silicon. In addition, bandgap narrowing in heavily-doped p-n junctions under the reverse-biased condition is also studied during the model development. At the end of the research work, the application to low standby power (LSTP) transistors is demonstrated to show the capability of our tunneling model in the device level.
Edward Chen received his B.S. and M.S. degrees from Electronics Engineering at National Chiao Tung University in 2002 and Electrical Engineering (EE) at UCLA in 2007, respectively. From 2002 to 2003, he was a FA engineer at UMC in Taiwan and excelled at the failure analysis of ESD circuits and logic devices. During his Ph.D. career, he has been a TA for the semiconductor devices laboratory, semiconductor processing and device design, and fundamentals of solid-state I. He received the UCLA Fellowship Award for 2007 academic year and the International Scholarship Award of Phi Beta Kappa Alumni in Southern California in 2009. His current research interests are the theory of interband tunneling in semiconductor and the application on low standby power transistors.