Spin Injection and Detection in Ge and MnGe

Masaaki Ogawa
Advisor: Kang L. Wang

Friday, February 26, 2010 at 2:00pm
Engr IV Room 67-124

Abstract:
Traditional CMOS has been the mainstream electron devices for over half century. As the scaling becomes more difficult as anticipated by the International?Technology Roadmap of Semiconductors (PTRS), alternate devices with high functionality and low power dissipation are needed. Spin based device offers potential to increase functionality by combining the logic and memory functions into one unit.

Recently, spin field effect transistors (FETs) receive considerable attention as a highly-functional building block of future integrated circuits. In order to realize the spin FETs, it is essential to achieve efficient spin injection and detection in semiconductor or diluted magnetic semiconductor (DMS) channel.

Efficiently injecting spin polarized electrons from ferromagnetic materials (FM) into semiconductor (SC) has been one of the major challenges in spintronics. FM/oxide/SC structure is considered as a good candidate for spin injection or detection because the tunnel contact between FM and SC might be ideal for solving the conductivity mismatch problem. In this study, spin injection and detection in Ge and MnGe is investigated.

Biography:

Masaaki Ogawa was born in Saga, Japan. He received B.S. degree in Electrical Engineering from Waseda University, Japan, in 2003 and M.S. degree in Electrical Engineering from University of California Los Angeles (UCLA) in 2006. He is currently a Ph.D. candidate in the EE department at UCLA.