Flexible and Transparent Memory
Jul 26, 2012
from 10:00 AM to 12:00 PM
|Where||ENGR. IV Bldg. Faraday Room 67-124|
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Sung Min Kim
Advisor: Professor Kang L. Wang
Electronic devices have been
going through intensive renovations in order to reply to the high demands of
consumers. In the near future, electronic devices are projected to be
incorporated into flexible and wearable modules to meet the
everlasting needs. With the intention of turning
this somewhat fantasy into reality, flexible and wearable electronic devices would require multiple core modules, such as
display, logic, and memory to be integrated
on a single substrate.
In this seminar, a graphene channel transistor based flexible and transparent memory (FTM) fabricated on Poly-ethylene-naphtalate (PEN) substrate will be presented as a memory module for flexible and transparent electronics. FTM samples were successfully fabricated through low temperature processes below 110℃ and characterized. The injection of electrons into the trap sites of a triple high-k dielectric stack resulted in excellent memory characteristics with large memory window. FTM might enable making a breakthrough in innovative design for electronics that has been impossible when using stiff and opaque substrates.
Sung Min Kim received B.S and M.S in Physics from KyungHee University Suwon, Korea in 1998 and 2000, respectively. He joined semiconductor R&D center at Samsung Electronics in 2000, where he is currently a senior engineer, working on developing high performance FET device and process. He is Ph.D candidate under the supervision of Professor Kang L. Wang. His current research interests include graphene based electronic devices and MEMS/NEMS for flexible and transparent electronics applications.