Nano Technology for Information Technology Application
Feb 17, 2012
from 01:00 PM to 05:00 PM
|Where||CNSI Executive Conference Room|
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The first topic is about optical components study. We have produced GaN by using Nano structure, Light Emitting Diode (LED) and FED structure. To fulfill the demands of higher lighting source industry, we tried to increase injection current. But we found that the outcome fall short of our expectations due to Droop effect. At present, we consider that we may be able to develop highly effective LED without Droop effect by using Nano rod Multi Quantum Well. In addition, we found out that light emitting can be driven without the existing complicated LED growth and processing by simply folding two boards together. Solar cell with simple structure can be also easily produced and we also expect that it will realize energy harvest for multi-purpose by producing wind energy at nights. For the last few years, multi-functional solar cell has been tried onto clothes, in which a piece of metal functioning as a solar cell is attached on clothes to harness the solar energy. In terms of practicality, it has little practical value. Thus, we made a try to make solar cell clothes. We expect that we are able to make clothes which function as solar cells by turning fiber itself into p-n inosculation. Secondly, we will explain our study on Multiferroic effect which shows the features of ferromagnetic semiconductor and ferroelectric semiconductor at a time. Furthermore it demonstrates Switching effect and Memory effect at once, and we call this device ‘Universal device’ since it has various I-V features according to external magnetic field. With regard to Graphene compound study, we found out that it dissolves in aqueous solution. And it can be utilized for low coast RF-ID structure sensor since it can be applied for printing electronics due to its non-volatile switching effect.
For additional information, please contact Professor Kang L. Wang (email@example.com)