Physical Mechanism and Fundamental Performance Limits on Graphene Non-volatile Memory Technologies
Jul 06, 2012
from 01:00 PM to 03:00 PM
|Where||ENGR. IV Bldg. Faraday Room 67-124|
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Emil B. Song
Advisor: Professor Kang L. Wang
Non-volatile memory (NVM) constitutes a vital portion in electronics to retain information for both archiving and data processing. Limitations encountered in flash technology upon increasing density and reducing cost by scaling necessitates alternative memory structures beyond complementary-metal-oxide-semiconductor (CMOS). The single atomic two-dimensional profile and the superior physical properties of graphene allow advancements in a variety of memory metrics when implemented into several types of memory architectures. In this talk, he will highlight how graphene can be exploited to various NVM structures, which are classified by the operating physical mechanism of the particular memory architecture, and discuss the performance advancements and challenges that arise compared to its predecessors.
Emil B. Song received a B.S. (2004) in physics from POSTECH, South Korea and M.S. (2009) in EE from UCLA. He is currently a PhD candidate in EE at UCLA. His research interests include graphene electronics, spintronics, and photonics.