Semiconductor Quantum Nanostructures by Droplet Epitaxy
Jan 27, 2012
from 05:00 PM to 06:00 PM
|Where||Engr. IV Bldg., Shannon Room 54-134|
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Professor Stefano Sanguinetti
University of Milano Bicocca, Italy
The Dropled Epitaxy (DE) is an MBE growth method which allows for the fabrication of III-V quantum
nanostructures with highly designable shapes and complex morphologies. With DE it is possible to combine different nanostructures, namely quantum dots, quantum rings and quantum disks, with tunable sizes and densities, into a single multi-function nanostructure, thus allowing an unprecedented control over electronic properties. Unlike standard self-assembly techniques, DE does not rely on strain for the formation of three-dimensional crystals. DE is based on the fine control of the crystallization kinetics of pulsed deposition of III and V column elements at controlled temperatures and fluxes. Recent achievement in DE nanostructure shape manipulation ad modeling will be presented.
Professor Stefano Sanguinetti is Associate Professor of Matter Physics at the University of Milano-Bicocca since 2004. He received his PhD in Milano under the supervision of Prof. G. Benedek in 1992. From 1996 to 2004 he was Assistant Professor at the University of Milano-Bicocca. During 2000-2001 he was C.O.E. Fellow at the National Institute for Material Science (Japan). His research interests cover different aspects of semiconductor nanostructure physics, ranging from modeling, characterization and growth. He is presently involved in the fabrication and characterization of quantum confined III-V nanostructures grown by droplet epitaxy. 1 textbook, 2 reviews, 130 scientific articles and numerous conference presentations.
For additional information, please contact Professor Kang L. Wang (email@example.com)