Progress of Solid State Microwave Devices
Oct 15, 2012
from 04:00 PM to 05:30 PM
|Where||Engr. IV Bldg., Faraday Rm. 67-124|
|Contact Name||Prof. Kang Wang|
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Hebei Semiconductor Research Institute (HSRI) of China
Microwave devices have been widely used. The state-of-the-art results for the microwave power devices will be summarized. Latest developments on GaN, SiC based microwave power transistors and MMIC will be presented along with some primary results of Graphene and diamond based devices from HSRI.
Shujun Cai, PhD is from the Device Research
Lab, UCLA, 2002. He is the Vice President of Hebei Semiconductor Research
Institute (HSRI) of China. He is a member of National microelectronics
specialists committee, also a member of the National Medium to Long Term Development
Planning in Science and Technology Committee of China. His major research activities include developing
Si, GaAs, InP, SiC, GaN based microwave power devices, as well as some other
emerging novel material based devices.