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Progress of Solid State Microwave Devices

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What
  • Visitor Seminars
When Oct 15, 2012
from 04:00 PM to 05:30 PM
Where Engr. IV Bldg., Faraday Rm. 67-124
Contact Name
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Shujun Cai

Hebei Semiconductor Research Institute (HSRI) of China

 

Abstract

Microwave devices have been widely used.   The state-of-the-art results for the microwave power devices will be summarized.   Latest developments on GaN, SiC based microwave power transistors and MMIC will be presented along with some primary results of Graphene and diamond based devices from HSRI. 

Biography

Shujun Cai, PhD is from the Device Research Lab, UCLA, 2002.  He is the Vice President of Hebei Semiconductor Research Institute (HSRI) of China.   He is a member of National microelectronics specialists committee, also a member of the National Medium to Long Term Development Planning in Science and Technology Committee of China.  His major research activities include developing Si, GaAs, InP, SiC, GaN based microwave power devices, as well as some other emerging novel material based devices.

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