Steep Subthreshold Swing Transistors
Apr 22, 2013
from 01:00 PM to 02:30 PM
|Where||Engr. IV Bldg., Shannon Room 54-134|
|Contact Name||Prof. Diana Huffaker|
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University of Notre Dame
Tunnel field-effect transistors (TFETs) are under investigation for logic applications to enable power supply reduction under 0.5 V. It is now shown experimentally that subthreshold swing of less than 60 mV/decade can be obtained. Projections based on experimental data now shows that the TFET can outperform the MOSFET at low voltages. This talk will review the physics of tunnel transistors and current experimental progress in the development of record on-current AlGaSb/InAs TFETs. More interesting are questions about what lies ahead? What material system will produce the TFET with the lowest supply voltage, the highest on-current, the highest on-off current ratio, and the lowest subthreshold swing? What are the key problems to solve?
Prof. Alan Seabaugh is a Professor of Electrical Engineering at the University of Notre Dame, Director of the SRC STARnet Center for Low Energy Systems Technology, and Associate Director of the Notre Dame Center for Nano Science and Technology. He received the Ph.D. degree in electrical engineering from the University of Virginia, in 1985. He has held positions at the National Bureau of Standards (1979–1986), Texas Instruments (1986–1997), and Raytheon (1997–1999). He has authored/coauthored more than 300 papers and holds 22 U.S. patents. He is an editor for the IEEE Transactions on Electron Devices and an IEEE Fellow. He received the International Symposium on Compound Semiconductor Quantum Devices Award in 2011.