Bridging the THz Gap with III-V Electronics
Jan 13, 2014
from 12:30 PM to 02:00 PM
|Where||Engr. IV Bldg., Shannon Room 54-134|
|Contact Name||Prof. Mani Srivastava|
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Dr. Vesna Radisic
One of the fundamental advancements in integrated circuit technology, which has occurred over the past decade, has been the rapid advancement of InP HEMT transistors and integrated circuit fabrication capabilities. This has led to the demonstration of low noise amplifiers and power amplification at frequencies as high as 670 GHz. Northrop Grumman’s design and fabrication facilities in Redondo Beach, California have generated a great deal of these advancements, including development of an InP HEMT transistor with fmax greater than 1 THz.
Traditional applications at sub-millimeter wave and THz frequencies include atmospheric sensing and radio astronomy. With new advancements in InP HEMT technology and current high level of interest, many new applications are being proposed in commercial, medical, and defense related areas. Design and demonstration examples that will be presented include power amplifier modules at 210 and 640 GHz, LNA at 670 GHz, and a 340 GHz receiver pixel using novel integration technique.
Dr. Vesna Radisic has received Ph.D. degree from UCLA in Electrical Engineering in 1998. Currently, she is a Senior Staff member at Northrop Grumman’s RF and Mixed Signal Department in Redondo Beach, CA. Her research interests include high frequency circuits and modules, power amplifiers, wideband amplifiers, and integration techniques. Dr. Radisic has received the 2007 IEEE MTT-S Outstanding Young Engineer Award and 2012 MWCL “Tatsuo Itoh” Best Paper Award.