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Cross-sectional Scanning Tunneling Microscopy for Atomically Resolved Analysis of Novel Semiconductor Nanostructures

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  • Visitor Seminars
When Sep 27, 2013
from 01:30 PM to 02:30 PM
Where Engr. IV Bldg., Maxwell Room 57-124
Contact Name
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Andrea Lenz and Holger Eisele

Technische Universität Berlin, Germany



The resulting spatial structure of semiconductor interfaces and nanostructures depend crucially on the growth and capping processes. Hence, investigations on the resulting embedded structures on the atomic scale are essential and important in order to understand growth processes and therewith optimize the optoelectronic properties. Cross-sectional scanning tunneling microscopy (XSTM) is a powerful tool for such a structural investigation. The advantages, but also the challenges of XSTM will be explained within this presentation using the different examples of novel semiconductor nanostructures, like e.g., InGaAs/GaP quantum dots/rings, GaAs/GaSb nanoscale agglomerations, a GaSb/GaAs interfacial misfit structure, and InGaAs/GaAs core-shell nanowires. 


Andrea Lenz completed her Ph.D. in physics with the experimental investigation of the “Atomic structure of capped In(Ga)As quantum dots for optoelectronic devices” at the Technische Universität Berlin in 2008. She is an expert in the field of characterization of the atomic structure of nanostructures such as quantum dot devices based on III-V materials. She is the author or coauthor of over 30 publications in international refereed journals and of over 80 presentations at international refereed conferences. She received a student award in 2008 and a poster award in 2011 and she has presented several invited talks at international conferences, workshops, and symposia.

Holger Eisele received his Ph.D. from Technische Universität Berlin, Germany, in 2001. He was awarded a Feodor Lynen Fellowship from the Alexander von Humboldt Foundation for a postdoctoral stay at University of Texas at Austin, TX, USA. Since 2002 he has been the leading PostDoc of the surface and nanostructure physics group at the Institute of Solid State Physics at Technische Universität Berlin. He has been working on the atomically-resolved characterization of semiconductor nanostructures since 1998. His recent work focuses on the structural properties of semiconductor surfaces and nanostructures and their correlation with growth processes at the atomic scale.

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