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Superlattice and Antimonide-Based Infrared Detectors

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  • Visitor Seminars
When Oct 25, 2013
from 11:00 AM to 12:30 PM
Where Engr. IV Bldg., Maxwell 57-124
Contact Name
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Arezou Khoshakhlagh

Jet Propulsion Laboratory, CALTECH



The closely lattice-matched material system of InAs, GaSb, and AlSb, commonly referred to as the 6.1Å material system, has emerged as a fertile ground for the development of new solid-state devices.  The flexibility of the system in simultaneously permitting type-I, type-II staggered, and type-II broken-gap band alignments has been the basis for many novel, high-performance heterostructure devices in recent years, including the GaInSb/InAs type-II strained layer superlattice infrared detectors proposed by Smith and Mailhiot in 1987.  The flexibility of the materials system allows for the use of artificial bandgap “superlattice” structures, as well as the elegant design of barrier infrared detectors (BIRDs).  BIRD arrays with superlattice absorbing regions offer great potential both for higher-operating temperature and low background applications. In this talk I will cover the status of superlattice diodes and barrier structures as well as IR detectors grown and characterized at the Jet Propulsion Laboratory designed for infrared absorption. Imaging results from of 320x256 LWIR superlattice will also be presented.



Arezou Khoshakhlagh received the PhD degree in optical sciences and engineering from the University of New Mexico, Albuquerque, in 2010 where she worked on design, growth, and characterization of Type-II strained layer superlattice infrared detectors as well as growth of GaSb quantum dot and Si based LEDs, Lasers, and solar cells.   She joined the Infrared Focal Planes & Photonics Technology Group, Jet Propulsion Laboratory, California Institute of Technology, Los Angeles, in April 2010 and has been leading the material growth and material characterization of mid wave infrared, long wave infrared, and two color superlattice arrays. Her research interests include design and growth of semiconductor heterojunctions for efficient light sources and detectors as well as energy harvesting applications. Dr. Khoshakhlagh was the recipient of the NSF IGERT Fellowship.

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