Biography
Oscar Stafsudd received his B.S., M.S., and Ph.D. from the University of California, Los Angeles, in 1959, 1961, and 1967, respectively. He has been on the faculty of the Electrical Engineering Dept. since 1967. He has consulted for various corporations such as Hughes Research Laboratories, Nortec Industries, Bendix Advanced Research Lab, Litton Industries, Airtron Industries, and Phraxos Research Development.

Prof. Stafsudd holds patents for a "new class of materials for the generation of coherent radiation between 300-1000 microns"; the "method of single crystal synthesis of ternary calcogenides"; "epitaxial growth of beta silicon carbide"; a "wafer base for silicon carbide semiconductor device"; "electromagnetic scattering in active guide"; silicon carbide (a metal carbide alloy semiconductor), and the method of making it; and has a patent pending for the technique for the Czochralsky growth of proustite and other related ternary semiconductor compounds.

Prof. Stafsudd is a member of the Optical Society of America, the American Association of Crystal Growth, and is a Senior Member of the IEEE. His research interests are in quantum electronics, especially IR lasers and nonlinear optics, and in solid-state IR detectors.