*Level 1 MOS models for Ldrawn = 1 u
 
* Note: For a device W microns wide, the source/drain junction area
* as = ad = 1.5*W micron**2 and the perimeter ps = pd = 2*W+3 microns.
* The value of lambda is inversely propotional to the channel length.
* Note the these parameters are different from those given in the
* book. 

.model nm nmos
+ level=1       vto=.8  gamma=.5        phi=.6  tox=180e-10
+ nsub=9e+14            ld=1e-7 uo=350  lambda=.08
+ cj=1.46e-4    cjsw=3.2e-10    pb=.65  mj=.37  mjsw=.26        
+ cgdo=4.4e-10  cgso=4.4e-10

.model pm pmos
+ level=1       vto=-.85        gamma=.6        phi=.65 tox=180e-10
+ nsub=4e+14            ld=1e-7 uo=150  lambda=.1 cj=2.8e-4     
+ cjsw=2.2e-10  pb=.73  mj=.47  mjsw=.22        cgdo=4.4e-10
+ cgso=4.4e-10