Email: gsbyun@ee.ucla.edu       Gyungsu Byun received the B.S, MS degree at Korea in 1997, 1999. From 1999 to 2005, he was with Samsung Electronics as a senior engineer and manager in the DRAM Design Group, where he worked on the design and development of Advanced High Speed DRAMs such as XDR-I, II and many kinds of Synchronous DRAMs such as DDR-II, Network Mobile, Rambus, and GDDR-II. Since 2005, he has pursued PhD degree at UCLA. Current research area includes high-speed and low-power interface circuits and systems for communications, high performance time-precision circuit designs (DLLs/PLLs/CDRs). He is the author/co-author of over 5 papers and holds 14 patents in the field of electronic circuits.