News
Dr. Paul Simmonds Wins Image of Distinction Award at Nikon Small World 2012 Photomicrogaphy Competition
Subject matter: A semiconductor sample thinned down to electron transparency using an argon plasma (50x)
Technique: Brightfield
The Nikon International Small World Competition first began in 1975 as a means to recognize and applaud the efforts of those involved with photography through the light microscope. Since then, Small World has become a leading showcase for photomicrographers from the widest array of scientific disciplines.
The Nikon Small World Competition is open to anyone with an interest in photography through the microscope. Truly international in scope, entries have been received from the United States, Canada, Europe, Australia, Latin America, Asia, and Africa. Winners have included both professionals and hobbyists.
Entries submitted to Nikon are then judged by an independent panel of experts who are recognized authorities in the area of photomicrography and photography. These entries are judged on the basis of originality, informational content, technical proficiency and visual impact.
Andrew Lin Wins Third Place for the FEI Company Tony Award For EICN TEM Imaging Contest 2012
Title: Chainmail Defects in a GaAs nanopillar grown on Si
Description: This is a 200 nm X 200 nm bright-field TEM image of a GaAs nanopillar cross-section. The nanopillar was grown by selective-area epitaxy using metal-organic chemical vapor deposition on a Si (111) substrate. The image was taken using a FEI Titan at 300 kV with a zone axis of [110]. High quality III-V semiconductors grown on Si have the potential for CMOS-compatible optoelectronic and electronic devices. Nanopillars have been shown to achieve such high quality growth on Si. However, if the growth conditions are slightly off, these types of crystal defects can form in the core of nanopillar creating grain boundaries with different atomic orientations. The image was taken with the FEI Titan S/TEM microscope.
Joshua Shapiro Wins Best Student Presentation At EMC
In the 2011 Electronic Materials Conference in UC Santa Barbara, graduate student Joshua Shapiro presented a paper entitled, "Structural Characterization of InGaAs Axial Inserts in GaAs Catalyst-Free Nanopillars Grown by Selective-Area MOCVD", co-authored by Andrew Lin and Professor Diana Huffaker. Joshua Shapiro's entry was selected as one of two Best Student Presentations by the committee.
Joshua presented a study of axial GaAs/InGaAs hetro-interface formation in catalyst-free nanopillars grown by selective-area MOCVD. The focus was on controlled growth of axial heterostructures as capability key for enabling efficient nanopillar light emitters and detectors, and preliminary light-emitting devices with axial double heterostructures grown on silicon.
The award, accompanied with a monetary prize, will be presented at the 2012 EMC Meeting in Penn State University on June 20, 2012. The EMC is a premier annual forum for the preparation and characterization of electronic materials sponsored by The Minerals, Metal and Materials Society Foundation.
About the Lab
The Integrated NanoMaterials Core Lab (Prof. Diana L. Huffaker Research Group, Electrical Engineering Dept, California NanoSystems Institute, UCLA) is devoted in conducting research on topics on optoelectronic devices enabled by atomic self-assembly at the heterointerface in novel compound III-(As, P, N Sb) materials for Si photonics, single photon sources, MWIR applications and solar cells. Unique aspects of our research include nanoscale-confined epitaxial processes in patterned and self-assembled quantum dots and device integration enabled by interfacial misfit arrays.