1. B. Jalali, C.C. Ng, and E.S. Yang (Edited by J. Jopke), "A general model for minority carrier transport in the polysilicon emitter," Proceedings of the 1987 Bipolar Circuits and Technology Meeting, pp. 146-9, Minneapolis, MN, September 1987.

2. B. Jalali, H.L. Evans, and E.S. Yang, "Carrier confinement photoconductive detector," Applied Physics Letters, Vol. 52 (no.16), pp. 1323-5, April 1988.

3. B. Jalali and E.S. Yang, "Charge storage in the polysilicon emitter," Annual Device Research Conference (Transactions on Electron Devices), Vol. 35 (no.12), pp. 2439-40, Boulder, CO, June 1988.

4. B. Jalali and E.S. Yang (Edited by J. Jopke), "Characterization of polysilicon contacts by photoconductance measurements," Proceedings of the Bipolar Circuits and Technology Meeting, pp. 125-7, Minneapolis, MN, September 1988.

5. B. Jalali and E.S. Yang, "A general model for minority carrier transport in polysilicon emitters," Solid-State Electronics, Vol. 32 (no.4), pp. 323-7, April 1989.

6. B. Jalali, R.N. Nottenburg, Y.K. Chen, A.F.J. Levi, D. Sivco, A.Y. Cho, and D.A. Humphrey, "Near-ideal lateral scaling in abrupt Al/sub 0.48/In/sub 0.52/As/In/sub 0.53/Ga/sub 0.47/As heterostructure bipolar transistors prepared by molecular beam epitaxy," Applied Physics Letters, Vol. 54 (no.23), pp. 2333-5, June 1989.

7. B. Jalali, R.N. Nottenburg, Y.K. Chen, D. Sivco, D.A. Humphrey, and A.Y. Cho, "High-frequency submicrometer Al/sub 0.48/In/sub 0.52/As/In/sub 0.53/Ga/sub 0.47/As heterostructure bipolar transistors," Electron Device Letters, Vol. 10 (no.8), pp. 391-3, August 1989.

8. B. Jalali, R.N. Nottenburg, W.S. Hobson, Y.K. Chen, T. Fullowan, S.J. Pearton, and A.S. Jordan, "AlInAs/GaInAs heterostructure bipolar transistors grown by metalorganic chemical vapour deposition," Electronics Letters, Vol. 25 (no.22), pp. 1496-8, October 1989.

9. R.N. Nottenburg, A.F.J. Levi, Y.K. Chen, B. Jalali, M.B. Panish, and A.Y. Cho, "InP-based heterostructure bipolar transistors," Annual GaAs IC Symposium, Technical Digest, pp. 135-8, San Diego, CA, October 1989.

10. B. Jalali, R.N. Nottenburg, Y.K. Chen, A.F.J. Levi, A.Y. Cho, and M.B. Panish, "Scaled AlInAs/InGaAs and InP/InGaAs heterostructure bipolar transistors," Proceedings of Annual Device Research Conference (Transactions on Electron Devices), Vol. 36 (no.11), p. 2602, Cambridge, MA, November 1989.

11. B. Jalali, E.S. Yang, P. Mei, "Characterization of polycrystalline silicon contacts by photoconductance measurements," Journal of Applied Physics, Vol. 67 (no.4), pp. 1953-56, February 1990.

12. B. Jalali, R.N. Nottenburg, A.F.J. Levi, R.A. Hamm, M.B. Panish, D. Sivco, and A.Y. Cho, "Base doping limits in heterostructure bipolar transistors," Applied Physics Letters, Vol. 56 (no.15), pp. 1460-62, April 1990.

13. A.F.J. Levi, R.N. Nottenburg, B. Jalali, A.Y. Cho, and M.B. Panish, "Physics and high speed devices," Proceedings of the International Conference on Indium Phosphide and Related Materials, pp. 6-12, Denver, CO, April 1990.

14. P. Mei, B. Jalali, E.S. Yang, N.G. Stoffel, and D.L. Hart, "Electrical and structural properties of shallow p/sup +/ junctions formed by dual (Ga/B) ion implantation," Applied Physics Letters, Vol. 56 (no.14), pp. 1362-64, April 1990.

15. R.N. Nottenburg, A.F.J. Levi, B. Jalali, D. Sivco, D.A. Humphrey, and A.Y. Cho, "Nonequilibrium electron transport in heterostructure bipolar transistors probed by magnetic field," Applied Physics Letters, Vol. 56 (no.26), pp. 2660-62, June 1990.

16. B. Jalali, Y.K. Chen, R.N. Nottenburg, D. Sivco, D.A. Humphrey, and A.Y. Cho, "Influence of base thickness on collector breakdown in abrupt AlInAs/InGaAs heterostructure bipolar transistors," Electron Device Letters, Vol. 11 (no.9), pp. 400-2, September 1990.

17. S. J. Pearton, B. Jalali, J.M. Poate, J.D. Fox, K.W. Kemper, C.W. Magee, and K.S. Jones, "High-energy (56 MeV) oxygen implantation in Si, GaAs, and InP," Applied Physics Letters, Vol. 57 (no.21), pp. 2253-55, November 1990.

18. R.N. Nottenburg, M. Banu, B. Jalali, D.A. Humphrey, R.K. Montgomery, R.A. Hamm, and M.B. Panish, "5 V, DC-12 GHz InP/InGaAs HBT amplifier," Electronics Letters, Vol. 26 (no.24), pp. 2016-18, November 1990.

19. S.J. Pearton, B. Jalali, J.M. Poate, J.D. Fox, K.W. Kemper, C.W. Magee, and K.S. Jones (Edited by J.A. Atwater, F.A. Houle, and D.H. Lowndes), "Characteristics of 56 MeV oxygen implantation into Si and III-V semiconductors," Surface Chemistry and Beam-Solid Interactions Symposium, pp. 271-6, Boston, MA, November 1990.

20. B. Jalali, M. Banu, R.N. Nottenburg, D.A. Humphrey, R.K. Montgomery, R.A. Hamm, and M.B. Panish, "A 10 Gb/s laser driver in InP/InGaAs HBT technology," International Electron Devices Meeting, Technical Digest, pp. 942-4, San Francisco, CA, December 1990.

21. M. Banu, B. Jalali, R. Nottenburg, D.A. Humphrey, R.K. Montgomery, R.A. Hamm, and M.B. Panish, "10 Gbit/s bipolar laser driver," Electronics Letters, Vol. 27 (no.3), pp. 278-80, January 1991.

22. B. Jalali, R.N. Nottenburg, M. Banu, R.K. Montgomery, A.F.J. Levi, M.B. Panish, and A.Y. Cho, "High speed InGaAs HBT devices and circuits," Third International Conference on Indium Phosphide and Related Materials, pp. 228-33, Cardiff, UK, April 1991.

23. B. Jalali, C.A. King, G.S. Higashi, J.C. Bean, R. Hull, Y.-F. Hsieh, J. Macaulay, and J.M. Poate, "Current gain enhancement in bipolar transistors by low-energy ion beam modification of the polycrystalline silicon emitter," Applied Physics Letters, Vol. 58 (no.18), pp. 2009-11, May 1991.

24. B. Jalali, P.R. Smith, R.N. Nottenburg, M. Banu, D.A. Humphrey, R.K. Montgomery, D. Sivco, and A.Y. Cho, "10 Gbit/s D flipflop using AlInAs/InGaAs HBTs," Electronics Letters, Vol. 27 (no.15), pp. 1314-15, July 1991.

25. A. Kermani and B. Jalali, "Control of polysilicon emitter interface using RTCVD," Proceedings of the International Society for Optical Engineering (Rapid Thermal and Integrated Processing), Vol. 1595, pp. 99-105, San Jose, CA, September 1991.

26. R.K. Montgomery, D.A. Humphrey, P.R. Smith, B. Jalali, R.N. Nottenburg, R.A. Hamm, and M.B. Panish, "A DC to 20 GHz high gain monolithic InP/InGaAs HBT feedback amplifier," International Electron Devices Meeting, Technical Digest, pp. 935-8, Washington, DC, December 1991.

27. B. Jalali, A.F.J. Levi, F. Ross, and E.A. Fitzgerald, "SiGe waveguide photodetectors grown by rapid thermal chemical vapour deposition," Electronics Letters, Vol. 28 (no.3), p. 269-71, January 1992.

28. A.F.J. Levi, B. Jalali, R.N. Nottenburg, and A.Y. Cho, "Vertical scaling in heterojunction bipolar transistors with nonequilibrium base transport," Applied Physics Letters, Vol. 60 (no.4), pp. 460-2, January 1992.

29. M. Banu, B. Jalali, D.A. Humphrey, R.K. Montgomery, R.N. Nottenburg, R.A. Hamm, and M.B. Panish, "Wideband HBT circuits for operation above 10 GHz and power supply voltages below 5 V," Electronics Letters, Vol. 28 (no.4), pp. 354-5, February 1992.

30. S.J. Pearton, B. Jalali, C.R. Abernathy, W.S. Hobson, J.D. Fox, K.W. Kemper, and D.E. Roa, "Isolation properties and experimental ranges of high energy ions in GaAs and InP," Journal of Applied Physics, Vol. 71 (no.6) pp. 2663-8, March 1992.

31. B. Jalali, A.F.J. Levi, S.L. Chuang, P.R. Smith, D.A. Humphrey, R.N. Nottenburg, D. Sivco, and A.Y. Cho, "Strain and vertical scaling in the base of Al/sub 0.48/In/sub 0.52/As/In/sub x/Ga/sub 1-x/As heterostructure bipolar transistors," International Conference on Indium Phosphide and Related Materials, pp. 418-19, Newport, RI, April 1992.

32. R.K. Montgomery, D.A. Humphrey, R.F. Kopf, B. Jalali, P.R. Smith, R.N. Nottenburg, D.L. Sivco, and A.Y. Cho, "5.2 V AlInAs/GaInAs HBT ICs for 10 Gbit/s optical fibre telecommunications," Electronics Letters, Vol. 28 (no.12), pp. 1146-7, June 1992.

33. G.P. Watson, E.A. Fitzgerald, B. Jalali, Y.H. Xie, B. Weir, and L.C. Feldman (Edited by J.C. Gelpey, J.K. Elliott, J.J. Wortman, and A. Ajmera) "Correlation between defect density and process variables in step-graded, relaxed Si/sub 0.7/Ge/sub 0.3/ grown on Si by RTCVD," Conference on Rapid Thermal and Integrated Processing, pp. 15-17, San Francisco, CA, April 1993.

34. B. Jalali, D.A. Humphrey, L. Naval, R.K. Montgomery, A.F.J. Levi, D. Sivco, N.K. Dutta, and A.Y. Cho, "An edge-coupled receiver OEIC using AlInAs/InGaAs HBTs," Proceedings of the International Conference on Indium Phosphide and Related Materials, pp. 281-4, Paris, France, April 1993.

35. J.M. Macaulay, R. Hull, B. Jalali, and C. Magee, "Characterization of arsenic doping profile across the polycrystalline Si/Si interface in polycrystalline Si emitter bipolar transistors," Applied Physics Letters, Vol. 63 (no.9), pp. 1258-60, August 1993.

36. J.A. Baquedano, A.F.J. Levi, B. Jalali, and A.Y. Cho, "Forward delay in scaled Al/sub 0.48/In/sub 0.52/As/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors," Applied Physics Letters, Vol. 63 (no.16), pp. 2231-3, October 1993.

37. J.A. Baquedano, A.F.J. Levi, and B. Jalali, "Comparison of graded and abrupt junction In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors," Applied Physics Letters, Vol. 64 (no.1), pp. 67-9, January 1994.

38. V.A. Posse and B. Jalali, "Gunn effect in heterojunction bipolar transistors," Electronics Letters, Vol. 30 (no.14), pp. 1183-4, July 1994.

39. V.A. Posse and B. Jalali, "Gunn effect and high-injection phenomenon in heterojunction bipolar transistors," Electronics Letters, Vol. 30, No. 22, pp. 1893-4, October 1994.

40. V.A. Posse, B. Jalali, and A.F.J. Levi, "Transferred-electron induced current instabilities in heterojunction bipolar transistors," Applied Physics Letters, Vol. 66 (no.24), p. 3319-21, June 1995.

41. V.A. Posse and B. Jalali, "Intrinsic oscillations in modified heterojunction bipolar transistors," Proceedings of the International Semiconductor Device Research Symposium (ISDRS-95), Charlottesville, VA, p. 179-182, December 1995.

42. V.A. Posse and B. Jalali (Edited by Scheffler, M. and Zimmermann, R.), "Instabilities in heterojunction bipolar transistors," Proceedings of the International Conference on the Physics of Semiconductors, Vol. 4, pp. 3295-8, Berlin, Germany, July 1996.

43. V.A. Posse and B. Jalali, "Dynamics of base widening in GaAs heterojunction bipolar transistors," Proceedings of the International Symposium on Compound Semiconductors (ISCS-23), p. 499-502, St. Petersburg, Russia, September 1996.

44. T. Yoon and B. Jalali, "622Mbit/s CMOS limiting amplifier with 40dB dynamic range," Electronics Letters, Vol. 32, No. 20, pp. 1920-2, September 1996.

45. D.C. Scott, D.P. Prakash, Q. Du, W. Wang, B. Jalali, and H.R. Fetterman, "Novel traveling wave-HPT technology with integrated polyimide optical waveguides," Proceedings of the Lasers and Electro-Optics Society (LEOS 1996), Vol. 2, pp. 101-2, Boston, MA, November 1996.

46. T. Yoon and B. Jalali, "1Gbit/s fibre channel CMOS transimpedance amplifier," Electronics Letters, Vol. 33, No. 7, pp. 588-9, March 1997.

47. V.A. Posse and B. Jalali, "Novel transient phenomena in heterojunction bipolar transistors," Solid-State Electronics, Vol. 41, No. 4, pp. 527-30, April 1997.

48. T. Yoon and B. Jalali (Edited by H. Grunbacher), "1.25 Gb/s CMOS differential transimpedance amplifier for gigabit networks," Proceedings of the European Solid-State Circuits Conference (ESSCIRC), pp. 140-3, Southampton, UK, September 1997.

49. T. Yoon and B. Jalali, "Front-end CMOS chipset for fiber-based gigabit ethernet," Proceedings of the Symposium on VLSI Circuits, pp. 188-91, Honolulu, HI, June 1998.

50. Y. Chiu, B. Jalali, S. Garner, and W. Steier, "Broadband linearization of externally modulated fiber-optic links," Proceedings of the International Topical Meeting on Microwave Photonics (MWP 1998), pp. 49-50, Princeton, NJ, October 1998.

51. Y. Chiu, B. Jalali, S. Garner, and W. Steier, "Broad-band electronic linearizer for externally modulated analog fiber-optic links," Photonics Technology Letters, Vol. 11, No. 1, pp. 48-50, January 1999.

52. R. Sadhwani, J. Basak, and B. Jalali, "Adaptive electronic linearization of fiber optic links," Proceedings of Optical Fiber Communication Conference (OFC 2003),Vol. 2, pp. 477-479, Atlanta, GA, March 2003.

53. A. Shah and B. Jalali, “Adaptive equalisation for broadband predistortion linearization of optical transmitters," IEE Proceedings Optoelectronics, Vol. 152 (no.1), pp. 16-32, February 2005.

54. J. Basak and B. Jalali, "Adaptive post-distortion for photodetector linearization," GOMAC, Paper #11.2, Las Vegas, NV, April 2005.

55. A. Shah, C.J. Hsu, and B. Jalali, “ISI equalization for a coherent optical MIMO (COMIMO) system," CLEO 2005, Baltimore, MD, May 2005.

56. S. Gupta, J. Stigwall, S. Galt, and B. Jalali, "Demonstration of distortion suppression in photonic time-stretch ADC using back propagation method," Int'l  Topical Meeting on Microwave Photonics (MWP), pp. 141-44, Victoria, BC, Canada, October 2007.

57. J. Chou, G.A. Sefler, J. Conway, G.C. Valley, and B. Jalali, "4-Channel continuous-time 77 GSa/s ADC using photonic bandwidth compression," Int’l Topical Meeting on Microwave Photonics (MWP), pp. 54-57, Victoria, BC, Canada, October 2007.

58. G.C. Valley, J. Conway, J. Chou, G.A. Sefler, S. Gupta, and B. Jalali, “Bandwidth compression optical processor using chirped fiber Bragg gratings,” Controlling Light with Light:  Photorefractive Effects, Photosensitivity, Fiber Gratings, Photonic Materials Conference, Paper # TuB6, Olympic Valley, CA, October 2007.*

59. A. Ayazi, C.J. Hsu, B. Houshmand, and B. Jalali, "All-dielectric photonic-assisted wireless receiver," LEOS Annual Meeting, pp. 42-43, Lake Buena Vista, Florida, October 2007.

60. J. Chou, D. Solli, and B. Jalali, “Raman amplified wavelength-time spectroscopy with picometer spectral resolution and single-shot detection,” LEOS Annual Meeting, pp. 222-23, Lake Buena Vista, FL, October 2007.

61. S. Gupta, G.C. Valley, and B. Jalali, “Distortion cancellation in time-stretch analog-to-digital converter,” Journal of Lightwave Technology, Vol. 25 (no.12), pp. 3716-21, December 2007.

*Invited Paper - Electron Devices & Circuits*