Silicon Photonics

[1]  B. Jalali, S. Fathpour, and K. K. Tsia, “Energy harvesting in silicon photonics,” Conference on Lasers and Electro-Optics (IEEE CLEO 2007), accepted (Paper #356), Baltimore, MD, May 2007 (INVITED).

[2]        R. Claps, D. Dimitropoulos, V. Raghunathan, S. Fathpour, B. Jusserand, and B. Jalali, “Si/Ge Platform for Lasers, Amplifiers, and Nonlinear Optical Devices Based on the Raman Effect,” SPIE Photonics West, San Jose, CA, January 2007 ( INVITED).

[3]        B. Jalali, S. Fathpour, and K. K. Tsia, “Energy Harvesting in Silicon Photonic Devices,” IEEE LEOS Annual Meeting 2006, pp. 382–83, Montreal, Canada, November 2006 (INVITED).

[4]        K. K. Tsia, S. Fathpour, and B. Jalali, “Two-Photon Photovoltaic Effect in Silicon Wavelength Converters,” IEEE LEOS Annual Meeting 2006, pp. 386–87, Montreal, Canada, November 2006.

[5]        K. K. Tsia, S. Fathpour, and B. Jalali, “Energy Harvesting in Silicon Raman Amplifiers,” in Group IV Photonics Conference, pp. 231–233, Ottawa, Canada, September 2006.

[6]        M. Krause, H. Renner, E. Brinkmeyer, S. Fathpour, D. Dimitropoulos, V. Raghunathan, and B. Jalali, “Efficient Raman Amplification in Cladding-Pumped Silicon Waveguides,” in Group IV Photonics Conference, pp. 61–63, Ottawa, Canada, September 2006.

[7]        S. Fathpour, K. Tsia, and B. Jalali, “Photovoltaic Effect in Silicon Raman Amplifiers,” Optical Amplifiers and Their Applications (OAA 2006), paper PD1, Whistler, BC, June 2006.

[8]        S. Fathpour, O. Boyraz, D. Dimitropoulos, and B. Jalali, “Demonstration of CW Raman Gain with Zero Electrical Power Dissipation in p-i-n Silicon Waveguides,” Conference on Lasers and Electro-Optics (IEEE CLEO 2006), paper CMK3, Long Beach, CA, May 2006.

[9]        D. Dimitropoulos, S. Fathpour, and B. Jalali, “Predicaments in CW Operation of Silicon Raman Lasers and Amplifiers,” Integrated Photonics Research and Applications (IPRA 2006), Paper ITuH4, Uncasville, CT, April 2006.

[10]    B. Jalali, S. Fathpour, O. Boyraz, D. Dimitropoulos, and V. Raghunathan, “Light Generation in Silicon,” JSAP-MicroOptics Conference, E1, pp. 1–4, Tokyo, Japan, October 2005 (INVITED).

 

Quantum Dot Lasers

[11]    P. Bhattacharya, Z. Mi, J. Yang, and S. Fathpour, “High Performance 1.3 µm Quantum Dot Lasers on GaAs and Silicon,” Photonics West, Proc. SPIE, vol. 6133, pp. 61330U1–U9, San Jose, CA, Jan. 2006.

[12]    Z. Mi, S. Fathpour, and P. Bhattacharya, “Characteristics of p-Doped Tunnel Injection 1.3 µm Quantum Dot Lasers,” Conference on Lasers and Electro-Optics (IEEE CLEO 2005), vol. 3, pp. 1677–1679, Baltimore, MD, May 2005.

[13]    Z. Mi, S. Fathpour, and P. Bhattacharya, R. Kovsh, S. S. Mikhrin, I. L. Krestnoikov, A. V. Kozhukhov, and N. N. Ledentsov, “Temperature Dependent Output Characteristics of p-doped 1.1 and 1.3 µm In(Ga)As Quantum Dot Lasers,” Photonics West, Proc. SPIE, vol.  5722, pp. 60–71, San Jose, CA, January 2005.

[14]    P. Bhattacharya, S. Fathpour, and Z. Mi, “Dynamic Characteristics of Quantum Lasers,” 17^th Laser and Electro-Optics Society Annual Meeting Conference Proceedings (IEEE LEOS 2004), Rio Grande, Puerto Rico, November 2004 (INVITED).

[15]    S. Fathpour, and P. Bhattacharya, “High Performance Quantum Dot Lasers,” Photonics Technology Access Program Quantum Dots Workshop, Albuquerque, NM, September 2004 (INVITED).

[16]    P. Bhattacharya, S. Fathpour, Z. Mi, and S. Chakrabarti, A. R. Kovsh, S. S. Mikhrin, I. L. Krestnikov, A. V. Kozhukhov, and N. N. Ledentsov, “High Performance Quantum Dot Lasers,” UKC-Nano2004 Proceedings, Research Triangle Park, NC, August 2004 (INVITED).

[17]    S. Fathpour, Z. Mi, S. Chakrabarti, P. Bhattacharya, A. R. Kovsh, S. S. Mikhrin, I. L.   Krestnikov, A. V. Kozhukhov, and N. N. Ledentsov, “Characteristics of High-Performance 1.0 µm and 1.3 µm Quantum Dot Lasers: Impact of p-doping and Tunnel Injection,” 62nd Device Research Conference Digest, pp. 156–160, Notre Dame, IN, June 2004.

[18]    S. Fathpour, P. Bhattacharya, and S. Ghosh, “Low Linewidth Enhancement Factor and Chirp and Suppressed Filamentation in Tunnel Injection In_0.4Ga_0.6As/GaAs Self-Assembled Quantum Dot Lasers,” Photonics West, Proc. SPIE, vol. 5361, pp. 29–34, San Jose, CA, January 2004.

[19]    S. Fathpour, P. Bhattacharya, S. Pradhan, S. Ghosh, and J. Topoľančik, “Modulation Characteristics of In_0.4Ga_0.6As/GaAs Quantum Dot Gain-Coupled Distributed Feedback Lasers,” 16^th Laser and Electro-Optics Society Annual Meeting Conference Proceedings (IEEE LEOS 2003), pp. 202–203, Tucson, AZ, November 2003.

[20]    S. Chakrabarti, K. Moazzami, S. Fathpour, P. Bhattacharya and J. Phillips, "Pulsed Laser Annealing of Self-Organized InAs/GaAs Quantum Dots,"  Electronics Materials Conference, Salt Lake City, UT, June 2003.

 

Spintronic Devices and Materials

[21]    M. Holub, S. Fathpour, S. Chakrabarti, J. Topoľančik, P. Bhattacharya, and Y. Lei, “High-Temperature Spin-Polarized Quantum Dot Light-Emitting Diodes,” 62^nd  Device Research Conference Digest, Notre Dame, pp. 160–161, IN, June 2004.

[22]    M. Holub, S. Chakrabarti, S. Fathpour, and P. Bhattacharya, Y. Lei, T. D. Mishima, M. B. Santos, M. B. Johnosn, D. A. Bloom, “Mn-Doped InAs Self-Organized Quantum Dots with Curie Temperature above 300K,” 46^th Electronics Material Conference, Paper P9, Notre Dame, IN, June 2004.

[23]    J. N. Gleason, M.E. Hjelmstad, V. D. Dasika, S. Fathpour, S. Ghosh, P. Bhattacharya, and R. S. Goldman "Nanometer-Scale Studies of Point Defect Distributions in GaMnAs Films,” 46^th Electronics Material Conference, paper P10, Notre Dame, IN, June 2004.

[24]    P. Bhattacharya, S. Fathpour, S. Chakrabarti, M. Holub, and S. Ghosh, “Application of Diluted Magnetic Semiconductors and Quantum Dots to Spin Polarized Light Sources,” Materials Research Society Symposium Proceeding, vol. 794, T8.1.1, Boston, MA, November-December 2004 (INVITED).

[25]    J. N. Gleason,  M.E. Hjelmstad,  V.D Dasika, S. Fathpour, S. Charkrabarti, P. Bhattacharya, and R. S. Goldman, “Cross Sectional Scanning Tunneling Microscopy Studies of Mn Distributions in Ga_1-xMn_xAs,” 31st Conference on the Physics and Chemistry of Semiconductor Interfaces, Kailua-Kona, HI, January 2004.

[26]    J. N. Gleason, M. E. Hjelmstad, S. Fathpour, S. Ghosh, P. K. Bhattacharya, and R. S. Goldman "Cross Sectional Scanning Tunneling Microscopy Studies of Mn Segregation in GaMnAs Films,” Materials Research Society Symposium, Boston, MA, November-December 2003.

[27]    J. N. Gleason, M. E. Hjelmstad, S. Fathpour, S. Ghosh, P. K. Bhattacharya, and R. S. Goldman, "Cross Sectional Scanning Tunneling Microscopy Studies of Mn Segregation in Ga_1-xMn_xAs films,” American Vacuum Society 50th International Symposium, Baltimore, MD, November 2003.

 

Microelectronic Devices

[28]    D. L. Pulfrey, A. R. St. Denis, S. Fathpour, W. A. Hagley, and R. K. Surridge, “Analysis and Improvement of f_T in GaAs-Based HBTs,” Ninth Canadian Semiconductor Technology Conference, Ottawa, Canada, August 1999.