PATENT, BOOK CHAPTER AND PROFESSIONAL MAGAZINE

[1]        B. Jalali, and S. Fathpour, “Negative Dissipation Optical Modulator,” U.S. Patent, Application No. UC06-382-1, pending.

[2]        B. Jalali, D. Dimitropoulos, V. Raghunathan, and S. Fathpour, “Silicon Lasers,” in Silicon Photonics: State of the Art, Graham Reed, Ed. (John Wiley and Sons, 2006).

[3]        B. Jalali, and S. Fathpour, “Have Silicon Lasers Come of Age?” Photonics Spectra, pp. 62–66, November 2005 (INVITED).

 

ARCHIVAL JOURNAL PUBLICATIONS

Silicon Photonics

[4]        S. Fathpour, K. M. Tsia, and B. Jalali, “Two-Photon Photovoltaic Effect in Silicon,” Journal of Quantum Electronics, submitted.

[5]        B. Jalali and S. Fathpour, “Can Silicon Change Photonics?” Journal of Physica Status Solidi (a), submitted (INVITED).

[6]        B. Jalali and S. Fathpour, “Silicon Photonics,” Journal of Lightwave Technology, 40^th Anniversary Special Issue on Optoelectronics, vol. 24, pp. 1400–1415 December 2006 (INVITED).

[7]        K. K. Tsia, S. Fathpour, and B. Jalali, “Energy Harvesting in Silicon Wavelength Converter,” Optics Express, vol. 14, pp. 12327-12333, December 2006.

[8]        B. Jalali, V. Raghunathan, R. Shori, S. Fathpour, D. Dimitropoulos, and O. Stafsudd, “Prospects for Silicon Mid-IR Raman Lasers,” Journal of Selected Topics in Quantum Electronics, vol. 12, pp. 1618-1627, December 2006.

[9]        S. Fathpour and B. Jalali, “Energy Harvesting in Silicon Optical Modulators,” Optics Express, vol. 14, pp. 10795-10799, October 2006.

[10]    S. Fathpour, K. M. Tsia, and B. Jalali, “Energy Harvesting in Silicon Raman Amplifiers,” Applied Physics Letters, vol. 89, p. 061109, August 2006.

[11]    D. Dimitropoulos, S. Fathpour, and B. Jalali, “Intensity Dependence of the Carrier Lifetime in Silicon Raman Lasers and Amplifiers,”  Applied Physics Letters, vol. 87, p. 261108, December 2005.

Quantum Dot Lasers

[12]    S. Fathpour, Z. Mi, and P. Bhattacharya, “Small-Signal Modulation Characteristics of p-Doped 1.1 and 1.3 μm Quantum Dot Lasers,” Photonics Technology Letters, vol. 11, pp. 2250–2252, November 2005.

[13]    Z. Mi, S. Fathpour, and P. Bhattacharya, “Measurement of modal gain in 1.1 μm p-doped tunnel injection InGaAs/GaAs quantum dot laser heterostructures,” Electronics Letters, vol. 41, pp. 1282-1283, November 2005.

[14]    Z. Mi, P. Bhattacharya, and S. Fathpour, “High-Speed 1.3 µm Tunnel Injection Quantum Dot Lasers,” Applied Physics Letters, vol. 86, p. 153109, April 2005.

[15]    S. Fathpour, Z. Mi, and P. Bhattacharya, “High-Speed Quantum Dot Lasers,” Journal of Physics D, vol. 38, pp. 2103-2111, June 2005.

[16]    S. Fathpour, Z. Mi, and P. Bhattacharya, A. R. Kovsh, S. S. Mikhrin, I. L. Krestnikov, A. V. Kozhukhov, and N. N. Ledentsov, “The Role of Auger Recombination in the Temperature Dependent Output Characteristics of p-Doped 1.3µm Quantum Dot Lasers,” Applied Physics Letters, vol. 85, pp. 5164–5166, November 2004.

[17]    S. Fathpour, P. Bhattacharya, S. Pradhan, and S. Ghosh, “Linewidth Enhancement Factor and Near-Field Pattern in Tunnel Injection In_0.4Ga_0.6As Self-Assembled Quantum Dot Lasers,” Electronic Letters, vol. 39, pp. 1443–1444, October 2003.

 

Spintronic Devices and Materials

[18]    J. N. Gleason, M. E. Hjelmstad, V. D. Dasika, R. S. Goldman, S. Fathpour, S. Charkrabarti, and P. Bhattacharya, “Nanometer-Scale Studies of Point Defect Distributions in GaMnAs Alloys,” Applied Physics Letters, vol. 86, pp. 11911–11913, 2005.

[19]    S. Fathpour, M. Holub, S. Chakrabarti, P. Bhattacharya, “Spin-Polarised Quantum Dot Light-Emitting Diodes with High Polarisation Efficiency at High Temperatures,” Electronics Letters, vol. 40, pp. 694 – 695, May 2004.

[20]    S. Chakrabarti, S. Fathpour, K. Moazzami, J. Phillips, Y.  Lei, N. Browning, and P.  Bhattacharya, “Pulsed Laser Annealing of Self-Organized InAs/GaAs Quantum Dots,” Journal of Electronic Materials, vol. 33, pp. L5–L8, 2004.

[21]    M. Holub, S. Chakrabarti, S. Fathpour, and P. Bhattacharya, Y. Lei, and S. Ghosh, “Mn-Doped InAs Self-Organized Diluted Magnetic Quantum-Dot Layers with Curie Temperatures above 300  K,” Applied Physics Letters, vol. 85, pp. 973–975, 2004.

 

Microelectronic Devices

[22]    D. L. Pulfrey, and S. Fathpour, “Performance Predictions for n-p-n Al_xGa_1-xN/GaN HBTs,” IEEE Transactions on Electron Devices, vol. 48, pp. 597–602, March 2001.

[23]    D. L. Pulfrey, S. Fathpour, A. St. Denis, M. Vaidyanathan, W. A. Hagley, and R. K. Surridge, “Application of the Traditional Compact Expressions for Estimating the Regional Signal-Delay Times of Heterojunction Bipolar Transistors,” Journal of Vacuum Science and Technology A, vol. 18, pp. 775–779, 2000.