EDUCATION

Ph.D. in Electrical Engineering                 

University of Michigan, Ann Arbor (April 2005)

 

Dissertation Title: “High Performance Lasers and Spin-Polarized Light Emitting Diodes with    Quantum Dot Active Regions”

Advisor: Prof. Pallab Bhattacharya

 

M.S., Electrical and Computer Engineering     

University of British Columbia, Vancouver, Canada (August 2000)     

                            

Thesis Title: “Performance Predictions for AlGaN/GaN Heterojunction Bipolar Transistors”

Supervisor: Prof. David Pulfrey

 

B.S. (Honors), Electrical Engineering (Electronics)        

Isfahan University of Technology, Isfahan, Iran (September 1995)     

 

EMPLOYMENT

July 2007 – Present: Visiting Assistant Professor, University of California, Los Angeles (UCLA).

July 2005 – June 2007: Postdoctoral Research Fellow, Optoelectronic Circuits and Systems Laboratory, Electrical Engineering Department, UCLA

Director of the Laboratory: Prof. Bahram Jalali

 

January 2001 – April 2005: Graduate Student Research Assistant, Solid-State Electronics Laboratory, University of Michigan, Ann Arbor

 

January 1999 – August 2000: Graduate Student Research Assistant, Department of Electrical and Computer Engineering, University of British Columbia, Vancouver, Canada

 

November 1997 – December 1998: R&D Engineer, Pardisan Inc.

 

December 1995 – October1997: Quality Control Engineer, Isfahan Optical Industry

       

ACADEMIC HONORS AND RESEARCH AWARDS

 

March 2007: Recipient of the 2007 UCLA Chancellor’s Award for Postdoctoral Research

 

Summer 2006: Worldwide Press Coverage of Research in Silicon Photonics (List Attached)

 

September 2000 – December 2000: International Student Fellowship, University of Michigan

 

September 1991 – September 1995: Fellowship for Outstanding Undergraduate Student, Isfahan University of Technology

July 1991: 14^th rank of National Universities Entrance Exam among more than 300,000 applicants nationwide

 

June 1990: Selected Student in the National Physics Olympics Exam

 

November 1989: First rank of Isfahan Province High Schools Scientific Competitions

 

TEACHING EXPERIENCES

Spring 2006: Lectured sessions in class EE122L, “Semiconductor Devices Laboratory”, UCLA

 

Fall 2004: Lectured sessions in the graduate class EECS529, “Semiconductor Lasers and LEDs”, University of Michigan, Ann Arbor

 

Winter 2002: Lab Tutor and Teaching Assistant, EECS429, “Semiconductor Optoelectronic Devices”, University of Michigan, Ann Arbor

 

Fall 1999 – Winter 2000: Lab Tutor and Teaching Assistant, “Project Integrated Program” for sophomore students of Electrical Engineering, University of British Columbia, Vancouver, Canada

 

Winter 1999: Teaching Assistant, EECE457, “RF Electronics”, University of British Columbia, Vancouver, Canada

 

RESEARCH HIGHLIGHTS

·         The first demonstration of energy harvesting in silicon photonic chips with worldwide press coverage (list attached). High power dissipation is the central problem in integration of silicon nonlinear-optical devices with CMOS electronics. The breakthrough demonstrated that not only high electrical power dissipation can be avoided in Si optical amplifiers, but electrical power can be generated in the process. It was also shown that the approach is applicable to other third-order nonlinear Si optical devices, such as Kerr-type wavelength converters, and optical modulators.

 

·         The first demonstration of temperature invariant operation in any semiconductor laser (infinite characteristics temperature) in p-doped 1.3 µm InAs/GaAs self-assembled quantum dot lasers; Development of a theory that attributed the T₀=∞ experimental result to the role of Auger recombination; First experimental report of modulation bandwidth in p-doped  quantum dot lasers and comparison with theory.

 

·         Report of highest modulation bandwidth (~25 GHz), in any quantum dot laser, to date, demonstrated by utilizing p-doping and tunneling injection; report of superior dynamic performance (zero linewidth enhancement factor and negligible chirp) and suppressed filamentation in the same lasers.

 

·         Demonstration of gain-coupled distributed feedback (DFB) quantum dot lasers with 30 dB side-mode suppression ratio and 4 Ĺ lasing mode linewidth.

 

·         Report of diluted magnetic In(Mn)As/GaAs quantum dots with Curie temperature >300K with potential applications in room-temperature spintronic memory devices and light sources.

 

·         Demonstration of spin-polarized InGaAs/GaAs quantum dot LEDs with an output polarization efficiency of 30% and record-high temperature operation of 95 K.

 

·         Performance prediction for nitride-based (AlGaN/GaN) heterojunction bipolar transistors (HBTs) and theoretical studies on the effect of quasi-ballistic transport in the frequency response of nanoscale (<40 nm) HBTs.

 

RESEARCH EXPERTISE

Device Fabrication

·         One and a half years of experience in processing Si photonic devices at UCLA’s Nanoelectronics Research Facility.

·         Four years of experience in processing state-of-the-art III–V (GaAs and InP-based) single-mode Fabry-Perot and DFB lasers, VCSELs and other optoelectronic and spintronic devices at Michigan Nanofabrication Facility, a member of the National Nanotechnology Infrastructure Network.

·         Major employed processes include photolithography, dry etching (RIE), wet chemical etching, thin film deposition, PECVD, rapid thermal annealing, wire bonding, substrate thinning and polishing.

 

Material and Device Characterization

Liquid helium magneto-optical cryostat; Superconducting quantum interference device (SQUID) magnetometry; Scanning electron microscopy (SEM); Photoluminescence (PL); Polarization-dependent electroluminescence (EL); Optical spectroscopy and reflectometery; Hall and magnetoresistance measurements; DC characteristics of semiconductor lasers; Modulation response, linewidth enhancement factor, chirp  and other dynamic characterizations of high-speed semiconductor lasers; Characterization of optical waveguides; Characterization of nonlinear optical effects, e.g., Raman and Kerr, in photonic devices.

 

Physical Modeling and Device Design

Developing codes for modeling physical properties of confined heterostructures and analysis of transistors and optoelectronic devices; Optical mode calculations and design of epitaxial heterostructures for optical microcavities, waveguides and photonic devices; Design of single-mode edge-emitting lasers and VCSELs; Various software packages and computer languages such as MATLAB, HSPICE, MEDICI, DAVINCI, ATLAS, ATHENA, ANSYS, OrCAD, Labview and TMS family DSP processors assembly language.

 

Epitaxial Growth 

      Four years of experience in molecular beam epitaxial (MBE) growth:

·         MBE growth of self-organized quantum dots and InGaAs/AlGaAs/GaAs heterostructures for lasers and other electronic and optoelectronic devices.

·         MBE growth of (III,Mn)–V diluted magnetic semiconductor nanostructures for spintronic applications.

·         General maintenance and repair of MBE and other ultra-high vacuum systems.

 

RESEARCH GRANTS AND PROPOSALS

My doctoral research was supported by ARO and AFOSR. My postdoctoral research is being funded by DARPA under the EPIC program. In the course of both works, I have been involved in the preparation of white papers, grant proposals, interim progress reports and presentations for annual review meetings. I have also represented UCLA and presented our achievements at the Phase II Kickoff of the EPIC program in August 2006.

 

PROFESSIONAL MEMBERSHIP

         Member of the Institute of Electrical and Electronics Engineers (IEEE).

         Member of the Optical Society of America (OSA).