email: vis@ee.ucla.edu
Areas of interest:
Semiconductor device physics. VLSI technology and devices, charge-couple devices, low temperature electronics, device lifetime and reliability, process induced damage.
Recent research falls into three broad areas of device physics and technology: low temperature electronics, process-induced damage, and thin oxide characterization and integrity. The low temperature electronic research is particularly important for two reasons. First, integrated circuits and devices operate better at reduced temperatures. Second, data and device behavior from low temperature operation offer excellent insight into the internal electronic processes in semiconductor devices, insight that will allow us to predict lifetime and reliability of VLSI devices. Process-induced damage occurs as modern very small geometry semiconductor devices are fabricated by ion implantation, etching and deposition of materials with plasma. High yield reliability and long life will be at risk until we better understand how to avoid the damage. Finally, the need to investigate the wear-out and integrity of gate oxide in thin oxides becomes important in modern VLSI technology.
last update: Dec 15, 1997