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ElecEngr/Viswanathan.C.
Viswanathan, C.R., Kosonocky, W.F. Proceedings of Special VLSI Workshop, 1986 Symposium on VLSI Technology, San Diego, The IEEE Electron Device Society, The Japan Society of Applied Physics, May, 1986.
Togei, R., Viswanathan, C.R. Proceedings of VLSI Workshop on Manufacturing Technology, 1987 Symposium on VLSI Technology, Karuizawa, Japan, The Japan Society of Applied Physics, The IEEE Electron Device Society, May, 1987.
Viswanathan, C.R., Togei, R. Proceedings of the VLSI Workshop on Metro logy for Process Control and IC Packaging, 1988 Symposium on VLSI Technology, San Diego, The IEEE Electron Device Society, The Japan Society of Applied Physics, May, 1988.
Togei, R., Viswanathan, C.R. Proceedings of VLSI Technology Workshop on Process Control and Reliability, 1989 VLSI Technology Symposium, Kyoto, Japan, The Japan Society of Applied Physics, The IEEE Electron Device Society, May, 1989.
Viswanathan, C.R., Togei, R. Proceedings of the VLSI Workshop on New Process Technologies for ULSI, 1990 Symposium on VLSI Technology, Honolulu, Hawaii, The IEEE Electron Device Society, The Japan Society of Applied Physics, June, 1990.
Nishimura, T., Viswanathan, C.R., Wong, S.S. Proceedings of VLSI Technoloy Work shop on Key Technologies for 0.5 um Manufacturing, 1991 Symposium on VLSI Technology, oiso, Japan, The Japan Society of Applied Physics, The IEEE Electron Device Society, May, 1991.
Viswanathan, C.R. "Charge Pumping," Characterization Methods for Sub micron MOSFETS, Chapter 3, edited by H. Haddra, Kluwer Academic Publishers, Boston, 1995, pp. 67-108.
Viswanathan, C.R. "Automatic Reverberation Time Recorder," J. of Inst. of Telecommunication Enars., 3:12-20, 1956.
Estrin, G., Viswanathan, C.R. "Organization of a Fixed-Plus-Variable
Structure Computer for Computation of
Eigenvalues and Eigenvectors of Real Symmetric Matrices," J. of the
Assoc. for Computing Machinery, 9:41-60, 1962.
Culver, W.H., Satten, R.A., Viswanathan, C.R. "Measurement of the Spin-Lattice Relaxation Time of the E-2E State of Cr-3plus in Al-203 by Paramagnetic Resonance at X Band Frequency," J. of Chemical Physics, 38:775-776, February 1963.
Viswanathan, C.R., Kaelin, G.R., "A Current Source for Vacuum Tube Circuits," Review of Scientific Instruments, 27:796-797, June 1966.
Viswanathan, C.R., Bickart, C., "A Glass/Metal Liquid Helium Dewar," Cryogenic Technology, p. 96-98, May, June 1967.
Viswanathan, C.R., Radisavljevis, K., Wong, E.Y., "Absorption Spectra of Pr-3plus and Nd-3plus Doped Lanthanum Sulfate," J. of Chemical Physics, 46:4231-4234, June 1, 1967.
Viswanathan, C.R., Marsh, O.J., "Space-Charge Limited Current of Holes in Silicon and Techniques for Distinguishing Double and Single Injection," J. of Applied Physics, 38:3135-3144, July, 1967.
Viswanathan, C.R., Ogura, S., "Effect of Heating Under Bias on Photoelectric Threshold in MOS Structure," Applied Physic Letters, 12:220-222, March 15, 1968.
Viswanathan, C.R., Kaelin, G.,"Spin Lattice-Relaxation-Time
Measurements on Er-3+ Doped Lanthanum Ethyleulfate," physical Review, 171:171-172,
July 15, 1968.
"Zero-Field Splitting of Gd-3plus Ions in Various Rare-Earth Ethyleulfates," J. of Chemical Physics, 49:966-967, July 15, 1968.
Viswanathan, C.R., Posner, R.S., "Functional Relationship Between Minority Carrier Density and Injection Level in a Bipolar Transistor," Electronics Letters, the Institution of Electrical Engineers, 5:378-379, 1969.
Viswanathan, C.R., Ogura, S., "Silicon-Oxide Interface Studies by Photoelectric Technique," Proc. of the IEEE , 57:1552-1557, September, 1969.
Viswanathan, C.R., Ogura, S., "Band Structure Studies on Silicon Using MOS," Physical Review B. 1:624-627, January 1970.
Petroff, I., Viswanathan, C.R. "Calculation of the Photoelectric Emission from Tungsten, Tantalum and Molybdenum," physical Review B, 4:799-816, August 1, 1971.
Petroff, I., Viswanathan, C.R. "Calculation of Density of States in W. Ta, and Mo," reprinted from: Electronic Density of States, MBS Special Publications 323:53-56, December 1971.
Viswanathan, C.R., Ogura, S., "Direct Measurement of Built-in Voltage in MOS Structures," J. of Applied Physics, 42:5865-5868, December 1971.
ElecEnar/Viswanathan,C.
Viswanathan, C.R., Loo, R.Y., "Photo-Injection of Electrons from Metal Films into Single-Crystal A1-203 Layers," Thin Solid Films, 13:87-92, 1972.
Viswanathan, C.R., Loo, R., Ogura, S., "Photoelectric Studies of Heteroepitaxial Semiconductor Films," J. of Vacuum Science Tech., 9:230-233, January-February, 1972.
Viswanathan, C.R., Loo, R.Y., "Internal Photoemission in Sapphire Substrates," Applied physics Letters, 21:370-372, October 15, 1972.
Viswanathan, C.R., Howes, R., Hinkle, V.O. "MOS-C V Test System for IC Process Control and Monitoring," Solid State Tech., 17-3, pp. 43-46 and 57, March, 1974.
McGreivy, D.J., Viswanathan, C.R. "The Effect of Arsenic in Improving Lifetime in Silicon-on-Sapphire Films," Applied physics Letters, 25:505-506, November 1, 1974.
Roedel, R., Viswanathan, C.R., "Reduction of Popcorn Noise in Integrated Circuits," IEEE Trans. on Electron Devices, pp. 962-964, October, 1975.
Ogura, S., Odajima, T., Viswanathan, C.R. "Cathodization Luminescence of Silicon," J. of Electrochemical Society, 123, pp. 878-880, June 1976.
Viswanathan, C.R., MaserJian, J., "Model for Thickness Dependence of Radiation Effect in MOS Transistor," IEEE Radiation Effects Conf., Handbook of Abstracts, p. 9, San Diego, CA, July 1976.
Viswanathan, C.R., Maserjian, J., "Model for Thickness Dependence of Radiation Charging in MOS Structures," IEEE Trans. on Nuclear Science, NS-23, p. 1540-45, December 1976.
Viswanathan, C.R., Takino, T., "Minority Carrier Generation Time and Surface Generation Velocity Determination from Q-t Measurements," IEEE Trans. on Electron Devices, ED-25, #7, pp. 817-821, 1978.
Bakowski, M., Cockrum, R.H., Zamani, N., Maserjian, J., Viswanathan, C.R. "Trapping Effects in Irradiated and Avalanche-Injected MOS Capacitors," IEEE Transactions on Nuclear Science, NS-25, pp. 1233-1238, 1978
Langan, J.D., Viswanathan, C.R. "Characterization of Improved InSb Interfaces," J. Vac. Sci. Technology, 16(5), pp. 1474-1477, Sept./Oct., 1979.
Tredwell, T.J., Viswanathan, C.R. "Interface-State Parameter Determination by Deep-Level Transient Spectroscopy," applied physics Letters, 36, p. 462-464, March, 1980.
Backensto, W.V., Viswanathan, C.R. "Bias-Dependent 1/f Noise Model of an MOS Transistor," IKE Proc. - I, Solid State and Electron Devices. 127, Part 1, pp. 87-93, April, 1980.
Backensto, W.V., Viswanathan, C.R. "Techniques for Analytically Determining Surface Potential and Mobility of an MOS Transistor," IKE Proc. - I, Solid State and Electron Devices, 127, Part 1, pp. 81-86, April 1980.
Lubberts, G., Viswanathan, C.R. "Generation and External Current in MOS Capacitors," Solid State Electronics, 23, p. 507-509, May 1980.
Tredwell, T.J., Viswanathan, C.R. "Determination of Interface-State Parameters in a MOS Capacitor by DLTS," Solid-State Electronics, 23:1171-1178, November 1980.
Backensto, W.V., Viswanathan, C.R. "Measurement of Interface State Characteristics of MOS Transistor Utilizing Charge-Pumping Techniques," IKE Proc., 128-1:44-52, April 1981.
Chen, J.Y., Viswanathan, C.R. "Barrier Lowering in Short-Channel CCD's," IEEE Trans. on Electron Devices, ED-29, pp. 1588-1593, 1982.
Chen, J.Y.-T., Viswanathan, C.R. "An Interactive Two-Dimensional Model for Designing VLSI CCD's," IEEE Transactions on Electron Devices, 30(9):1135-1142, September, 1983.
Chen, J.Y., Viswanathan, C.R. "Geometry Dependence of Dark Current in CCD's," IEEE Transactions on Electron Devices, ED-31(12):1914-1916, December 1984.
Viswanathan, C.R., Burkey, B.C., Lubberts, G.,Tredwell, T.J. "Threshold Voltage in Short-Channel MOS Devices," IEEE Transactions on Electron Devices, ED-32(5):932-940, May 1985.
Wikstrom, J.A., Viswanathan, C.R, "A Direct Depletion Capacitance Measurement Technique to Determine the Doping Profile Under the Gate of a MOSFET," IEEE Transaction on Electron Devices, ED-34: 2217-2219, October 1987.
Gitlin, D., Viswanathan, C.R., Abidi, A.A. "Output Impedance Frequency Dispersion and Low Frequency Noise in GaAs MESFETs," Journal De Physique, Supplement au no 9, Tome 49, pp. C4-201 C4-204, September, 1988.
Wikstrom, J.A., Viswanathan, C.R. "Lateral Nonuniformities and the MOSFET Mobility Step Near Threshold," IEEE Transactions on Electron Devices, ED-35(12): 2378-2383, December 1988.
ElecEnar/Viswanathan.C.
Chang, C-S., Fetterman, H.R., Viswanathan, C.R. "The Characterization of High Electron Mobility Transistors Using Shubnikov-de Haas Oscillations and Geometrical Magnetoresistance Measurements," J. of Apli.. Phys., 66, pp. 928-936, July, 1989.
Wilcox, R.A., Chang, J., Viswanathan, C.R. "Low-Temperature Characterization of Buried-Channel NMOST," IEEE Transactions on Electron Devices, 36, pp. 1440-1447, August, 1989.
Hairapetian, A., Gitlin, D., Viswanathan, C.R. "Low-Temperature Mobility Measurements in CMOS Devices," IEEE Transactions on Electron Devices, 36(8): pp. 1448-1455, August, 1989.
Raman, V.K., Chang, J., Viswanathan, C.R. "Electrical Properties of GaAs/InGaAs High Electron Mobility Transistors," International Journal of Electronics, 69, pp. 621-629, 1990.
Bubulac, L.O., Edwall, D.D, Viswanathan, C.R. "Dynamics of Arsenic Diffusion
in Metalorganic Chemical Vapor Deposited HgCdTe on GaAs/Si
Substrates," Journal of Vacuum Science and Technology, B. 9(3), pp.
1695-1704, May-June, 1991.
Raman, V.K., Viswanathan, C.R., Kim, M.E. "D.C. Conduction and Low-Frequency Noise Characteristics of GaAlAs/GaAs Single Heterojunction Bipolar Transistors at Room Temperature and Low Temperatures," IEEE Transactions on Microwave Theory and Techniques, 39(6), pp. 1054-1058, June, 1991.
Wang, J., Kistler, N., Woo, J., Viswanathan, C.R. "Threshold Voltage Instability at Low Temperatures in Partially Depleted Thin-Film SOI MOSFET's," IEEE Electron Device Letters, 12(6): pp. 300-302, June, 1991.
Viswanathan, C.R., Divakaruni, R., Kizziar, J. "Low-Temperature CV Dispersion in MOS Devices," IEEE Electron Device Letters, 12(9), pp. 503-505, September, 1991.
Kistler, N. Woo, J., Viswanathan, C.R., Terrill, K., Vasudev, P.K.
"Substrate Current Measurements in Thin
SOI MOSFET's at 300 and 77 K,"
IEEE Transactions on Electron Devices, 38(12), pp. 2684-2686, December,
1991.
Bubulac, L.O., Viswanathan, C.R.
"Novel Very Sensitive
Analytical Technique for Compositional Analysis of Hgl-xCdxTe Epilayers,"
Appl. Phys. Lett., 60(2), pp. 222-224, January,
1992.
Bubulac, L.O., Edwall, D.D., Cheung, J.T., Viswanathan, C.R.
"Compositional Analysis of HgCdTe Epitaxial
Layers Using Secondary Ion Mass Spectrometry,"
Journal of Vacuum Science and Technology B. 10(4), pp. 1633-1637, July/August,
1992.
Hsu, J-T., Li, X.,Viswanathan, C.R.
"Low Frequency Noise
in Short-Channel MOSFET's Degraded by Fowler-Nordheim and Hot-Carrier Injection,"
Microelectronic Engineering, 22, pp. 285-288, 1993.
Li, X., Hsu, J-T., Aim, P., Can, D., Rembetski, J., Viswanathan, C.R.
"Plasma-Damaged Oxide Reliability Study
Correlating Both Hot-Carrier Injection and Time-Dependent Dielectric Breakdown,"
IEEE Electron Device Letters, 14(2), pp. 91-93, February, 1993.
Rembetski, J.F., Can, Y.D., Boden, E., Gu, T.,
Awadelkarim, O.O., Ditizio, R.A., Fonash, S.J., Li, X., Viswanathan, C.R.
"A Comparison of C12
and HBr/C12-Based Polysilicon Etch Chemistries: Impact on sio2 and Si Substrate
Damage," Japanese Journal of Applied Physics, 32, Part 1 (6B), pp.
3023-3028, June, 1993.
Hsu, J-T., Viswanathan, C.R.
"Identification of Generation-Recombination
Centers and Traps in Virgin and Fowler-Nordheim Stressed Metal-Oxide Semiconductor
Field-Effect Transistors by Low Temperature Charge Pumping Technique,"
Japanese Journal of Applied Physics, Special Isssue, Vol. 33, Part
1, No. 1B, pp. 683-687, January 1994.
Li, X., Hsu, J-T., Aim,, P., Bisseur, V., Can,,
D., Viswanathan, C.R.
"Reappearance of Plasma
Induced Oxide Charge under Fowler-Nordheim Stress,"
IKE Electronic Lett., 30(4), pp. 367-368, February,
1994.
Li, X., Divakaruni, R., Hsu, J-T., Prabhakar, V., Aim,, P., Can,, D.,
Viswanathan, C.R.
"Effect of Plasma Poly Etch on Effective
Channel Length and Hot Carrier Reliability in Submicron Transistors,"
IEEE Electron Device Letters, 15(4), pp. 140-141, April, 1994.
Wang, J., Kistler, N., Woo, J., Viswanathan, C.R.
"Mobility-Field Behavior
of Fully Depleted SOI MOSFET's,"
IEEE Electron Device Letters, 15(4), pp. 117-119,
April, 1994.
Hsu, J-T., Li, X., Aim,, P., Can,, D., Viswanathan, C.R. "Hot-Carrier Degradation of CMOS Inverters and Ring Oscillators at 77K," Journal de Physique IV, Collogue C6, pp. 37-41, June, 1994.
Divakaruni, R., Peterson, R., Nystrom, S., Viswanathan, C.R.
"Low Temperature Low Frequency Noise in Oxide
and Reoxidized-Nitrided Oxide Films,"
Journal de Physique IV, Collogue C6, pp. 43-48, June, 1994.
Fonash, S.J., Viswanathan, C.R., Can, Y.D. "A Survey of Damage Effects in Plasma Etching," Solid State Technology, pp. 99-101, July, 1994.
Divakaruni, R., Prabhakar, V., Viswanathan, C.R.
"Activation Energy Determination from Low-Temperature
CV Dispersion,"
IEEE Transactions on Electron Devices, 41(8), pp. 1405-1413, August,
1994.
Chang, J., Abidi, A.A., Viswanathan, C.R.
"Flicker Noise
In CMOS Transistors from Subthreshold to Strong Inversion at Various Temperatures
,"
IEEE Transactions on Electron Devices, 41(11),
November, 1994, pp. 1-9.
Brozek, T., Hahn, D., Viswanathan, C.R.
"Anomalous degradation of MOS Structures
in Substrate Hot Electron Injection Experiments"
, Microelectronic Engineering, Vol. 28, (1995) pp. 337-340.
Divakaruni, R., Viswanathan, C.R. "Quasi-Static Behavior of MOS Devices in the Freeze-Out Regime," IEEE Transactions on Electron Devices, Vol. 42, No. 1, pp. 87-93, January, 1995.
Brozek, T., Can, Y. D., Viswanathan, C. R.
"A Model for Threshold Voltage Shift Under
Positive and Negative High-Field Electron Injection in Complementary Metal-Oxide-Semiconductor
(CMOS) Transistors,"
Jpn. J. Appl. Phy., Vol. 34, Part 1, No. 2B, pp. 969-972, February,
1995.
Viswanathan, C.R., Ogura, S., "Optical Pumping in MOS Structures," Proc. of the Conf. on Solid State Devices, p. 31, September, 1967.
Viswanathan, C.R., Ogura, S., "Electron Emission Across Solid State Interfaces," Proc. of the Conf. of APS. and Bulletin of APS, 14:788, July 1969.
Viswanathan, C.R., Messenger, G.C., Alexander, D.H., Heaton, E.C., Lane, R.N., "Neutron Damage Constant for Bipolar Transistors," Proc. of IEEE Conf. on Nuclear & Space Radiation Effects, p. 51-54, July 1969.
Backensto, W.V., Viswanathan, C.R. "An Improved 1/f Noise Model of an MOS Transistor," Int. Electron Devices Meeting, Technical Digest, Washington, D.C., 1975, pp. 469-473.
Backensto, W.V., Viswanathan, C.R. "The Utilization of Charge Pumping Techniques to Evaluate the Energy and Spatial Distribution of Interface States of an MOS Transistor," Int. Electron Devices Meeting Technical Diaest, pp. 452-455, Washington, D.C., 1976.
Viswanathan, C.R., Khosla, R., Losee, D., "Observation of Electron and Hole Trapping in Charge Pumping Experiments," IEEE Semiconductor Interface Specialists Conf., Miami, FL, December 1977,
Dorosti, J., Viswanathan, C.R. "Photo-Injection Studies of Traps in HC1/H20 Oxides," The Physics of Si 02 and Its Interfaces, Proc. of the Int. Topical Conf., Yorktown Heights, NY, Pergamon Press, pp. 184-188, March 1978.
Langan, J.D., Viswanathan, C.R., Merilainen, C.R., Santarosa, J.F. "Characterization of Improved InSb Interfaces," IEEE Int. Electron Devices Technical Diaest, pp. 378-401, December 1978.
Viswanathan, C.R., Levy, M.E. "Modelling Inter-Electrode Capacitances in a MOS Transistor," IEEE Int. Electron Devices Technical Diaest, pp. 38-42, December, 1979.
Viswanathan, C.R. "LSI/VLSI in Electrical Engineering Curriculum," 1980 ASEE Annual Conference Proceedings, Univ. of Massachusetts, pp. 66-70, June, 1980.
Viswanathan, C.R. "A Mask Design and Verification System for the 80's," Proc. IEEE Custom Integrated Circuit Conf., p. 21, Rochester, NY, 1981.
Conilogue, R., Viswanathan, C.R. "A Complete Large and Small Signal Charge Model for an MOS Transistor," IEDM Technical Digest pp. 654-657, 1982.
Mitra, S., Rasmussen, R., Wang, P.K., Pruppacher, H.R., Ferreira, J., Viswanathan, C.R. "On the Characteristics of Ice Nucleation Sites," VI Int. Symposium on the Physics and Chemistry of Ice, 2 pages, 1982.
Viswanathan, C.R. "MOS Modelling," Proceedings of the IEEE Custom Integrated Circuits Conference, Invited Paper, pp. 199-204, Rochester, New York, May, 1982.
Viswanathan, C.R. "Physics of MOS Device Modeling, "Proc. of the 2nd International Workshop on the Physics of Semiconductor Devices, New Delhi, India, Dec. 1983, 8 pp.
Viswanathan, C.R. "Industry-State Cooperation in VLSI Education: MICRO Program," Proc. of the VLSI-Pacific Agren Recion Conference, Melbourne, Australia, May 15-17, 1984. (also in J. of Electrical and Electronics Engineering, Vol. 4(4), pp. 325-327, Australia, December, 1984.)
Abidi, A.A., Viswanathan, C.R., Wu, J.J-M., Wikstrom, J.A. "Flicker Noise Characteristics of CMOS IC Technologies," Proceedings of the International Symposium on VLSI Technology: Systems and Applications, pp. 198-200, Taipei, Taiwan, May, 1987.
Abidi, A.A., Viswanathan, C.R., Wu, J.J-M., Wikstrom, J.A. "Flicker Noise in CMOS: A Unified Model for VLSI Processes," Proceedings of 1987 Symposium on VLSI Technology, pp. 85-86, Karuizawa, Japan, May, 1987.
Abidi, A.A., Viswanathan, C.R., Chang, J., Wu, J.J.-M., Wikstrom, J.A. "Uniformity in Flicker Noise Characteristics of CMOS IC Technologies," Proceedings of the Ninth International Conference on Noise in Physical Systems, pp. 469-472, May, 1987.
Viswanathan, C.R. "A Quasi one-dimensional Model for Short-Channel MOST," Proceedings of the Fourth International Workshop on the Physics of Semiconductor Devices, pp. 107-114, Madras, India, December, 1987.
Wikstrom, J.A., Viswanathan, C.R., Abidi, A.A."Microscopic Mobility of Electrons in Weakly Inverted MOSFET's," IEDM Technical Direst, pp. 648-651, Washington, D.C., December 6-9, 1987.
Chang, J., Viswanathan, C.R. "Flicker Noise Behavior of MOSFET's after Oxide Degradation under High Gate Voltage," Proc. of the Tenth International Conference on Noise in Physical Systems, pp. 503-506, Budapest, Hungary, 1989.
Chang, J., Viswanathan, C.R., Anagnostopoulos, C. "Flicker Noise Measurements in Enhancement Mode and Depletion Mode N-MOS Transistors," Proc. of the 1989 International Symposium on VLSI Technology. Systems and Application, pp. 217-221, Taiwan, May, 1989.
ElecEnar/Viswanathan.C.
Viswanathan, C.R. "Low Temperature Characterization of CMOS Devices," Proc. of the 1989 International Symposium on VLSI Technology. Systems and Applications, pp. 207-212, Taiwan, May, 1989.
Grupen, M.E, Viswanathan, C.R. "A Numerical Simulation of the Transient Drain Current in a MOST at Cryogenic Temperatures," Proc. Of the Low Temperature Electronics Workshop, pp. 63-67, Burlington, August, 1989.
Chang, J., Viswanathan, C.R. "Low Frequency Noise in CMOST's at Cryogenic Temperatures," Proc. of the 10th International Conference on Noise in Physical systems, pp. 499-502, Budapest, Hungary, August, 1989.
Chang, J., Viswanathan, C.R. "Low Frequency Noise in CMOST's at Cryogenic Temperatures," Proc. of the Workshop on Low Temperature Semiconductor Electronics, pp. 133-136, Burlington, Vermont, August, 1989.
Wang, J., Chang, J., Raman, V.K., Vasudev, P.K., Viswanathan, C.R. "Electrical Characterization of SOS N-MOSFET's at Cryogenic Temperatures," Proceedings of the 1989 IEEE SOS/SOI Technology Conference, pp. 41-42, Sierra Stateline, October 3-5, 1989.
Viswanathan, C.R. "Characterization of CMOS Devices at Cryogenic Temperatures," Proceedings of the Vth International Workshop on the Physics of Semiconductor Devices, 6 pages, New Delhi, India, December 11-15, 1989.
Wang, J., Kistler, N., Woo, J., Viswanathan, C.R., Vasudev, P.K. "Low Temperature Effective Channel Mobility in Fully Depleted and Partially Depleted SOI MOSFET's," Proceedings of the 1990 IEEE SOS/SOI Technology Conference, pp. 89-90, Key West, Florida, October 2-4, 1990.
Wang, J., Kistler, N., Woo, J., Viswanathan, C.R. "Threshold Voltage Instability at Low Temperatures in Partially Depleted Thin Film SOI MOSFET's," Proceedings of the 1990 IEEE SOS/SOI Technology Conference, pp. 91-92, Key West, Florida, October 2-4, 1990.
Chang, J., Viswanathan, C.R. "Noise Characteristics of n- and p-Channel MOS Transistors," Proceedings of the 1990 IEEE Semiconductor Interface Specialists Conference, 3 pages, December 6-8, 1990.
Viswanathan, C.R., Divakaruni, R., Prabhaker, V. "Depletion Region Formation at Low Temperatures," Proceedings of the 1991 International Symposium on VLSI Technology. Systems. and Applications, pp. 274-277, Taiwan, May 22-24, 1991.
Bubulac, L.O., Edwall, D.D., Cheung, J.T., Viswanathan, C.R.
"A Novel Quantitative Analytical Method
for Compositional Analysis of Hgl-xCdxTe Epilayers,"
Proceedings of the Fifth International Conference on II-VI Compounds,
Tamano, Okayama, Japan, September 8-13, 1991, 11 pages.
Chang, J., Nayak, D.K., Raman, V.K., Woo, J.C.S., Park, J.S., Wang, K.L., Viswanathan, C.R. "Low Frequency Noise in Quantum-Well GexSil-x PMOSFET's," Proceedings of the 21st European Solid State Device Research Conference, Lausanne, Switzerland, September 16-19, 1991, pp. 19-22.
Hsu, J.-T., Wang, J., Woo, J., Viswanathan, C.R. "Flicker Noise in Thin Film Fully Depleted SOI MOSFETS," Proceedings of the 1991 IEEE SOS/SOI Technology Conference, Colorado, October 1-3, 1991, pp. 30-31.
Chang, J., Viswanathan, C.R. "Flicker Noise in CMOS Transistors - A One Dimensional Numerical Model," Proceedings of the 1991 International Conference on Noise in Physical Systems and 1/f Fluctuations, Kyoto, Japan, November 24-27, 1991, pp. 245-248.
Viswanathan, C.R., Hsu, J-T., Divakaruni, R., Li, X. "Charge Pumping at Cryogenic Temperatures," Proc. of the 23rd European Solid State Device Research Conference, 1993, pp. 1-2.
Hsu, J-T., Viswanathan, C.R. "Identification of Generation-Recombination Centers and Traps among Interface States by Cryogenic Charge Pumping Technique," International Conference on Solid State Devices and materials, Chiba, Japan, 1993, pp. 844-846.
Chang, J., Viswanathan, C.R.
"Modeling and Characterization of Flicker
Noise in CMOS Transistors from Subthreshold to Strong Inversion,"
AIP Conference Proceedings. Noise in Physical Systems, 1993, pp. 358-361.
Viswanathan, C.R., Tsu, J-T., Aim,, P., Can,,
D.
"Enhanced Gate-Controlled-Diode
Current (EGCDC) Measurement,"
IEEE International Conference on Microelectronic
Test Structures, Barcelona, Spain, March, 1993, Vol. 6, pp. 45-49.
Hsu, J-T., Li, X., Viswanathan, C.R.
"Correlation Between 1/f Noise (Slow States)
and Charge Pumping (Fast States) in Degraded MOSFET's,"
AIP Conference Proceedings. Noise in Physical Systems and 1/f Fluctuations,
1993, pp. 402-405.
Hsu, J-T., Li, X., Viswanathan, C.R. "Low Frequency Noise in Short-Channel MOSFET's Degraded by Fowler-Nordheim and Hot-Carrier Injection," IEEE 8th Insulating Films on Semiconductors, Delft, the Netherlands, June, 1993, 4 pages.
Viswanathan, C.R. "Hot-Carrier and Fowler-Nordheim Stress in Sub-Micron MOS Transistors," VIIth International Workshop on Physics of Semiconductor Devices, New Delhi, India, December 14-18, 1993, pp. 526-533. (Invited Paper)
Viswanathan, C.R. "Plasma Etching Damage," Proceedings of the 20th Annual Tegal Plasma Seminar, 1994, pp. 101-106.
Li, X., Hsu, J-T., Aim, P., Bissessur, V., Can, D., Viswanathan, C.R.
"Reliability Study of Plasma Etching Damage
in ULSI Process,"
Proceedings of Material Research Society Spring Meeting, San Francisco,
April, 1994, 6 pages.
Brozek, T., Viswanathan, C.R. "A Consistent Model for Polarity Dependence of Threshold Voltage Shift in Fowler-Nordheim Stressed CMOS Transistors," Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, Yokohama, Japan, August 23-26, 1994, 2 pages.
Brozek, T., Viswanathan, C.R.
"Homogeneous Hot Hole
Injection by Tunnelling in Gate Oxides of CMOS Devices,"
Proceedings of the 24th European solid State
Device Research Conference, September, 1994, pp. 515-518.
Li, X, Aum, P., Chan, D. , Viswanathan, C.R.
"impact of plasma Etching on Device Hot Carrier and Fowler-Nordheim Reliability,"
Proceedings of the 24th European Solid State Device Research Conference,
September, 1994, pp. 413-416.
Li, X.-Y., Brozek, T., Can, Y.D., Viswanathan, C.R.
"Enhanced N-MOSFET Hot Carrier Degradation
Due to C12-Rich Plasma Poly Etching,"
Abstracts of the IEEE Semiconductor Interface Specialists Conference,
San Diego, pp. 1.5-1.6, December 8-10, 1994.
Aim, P., Li, X.-Y., Prabhakar, V., Brozek, T.,
Viswanathan, C.R.
"Use of SPIDER for
the Identification and Analysis of Process Induced Damage in 0.35um Transistors,"
Proceedings of the IEEE International Conference
on Microelectronic Test Structures, Vol. 8, Nara, Japan, pp. 1-4, March
1995.
Li, X-Y., Brozek, T., Aim, P., Can, D., Viswanathan, C.R. "Degraded CMOS Hot Carrier Life Time - Role of Plasma Etching Induced Charging Damage and Edge Damage," IEEE International Reliability Physics Symposium, Las Vegas, pp. 260-265, April 3-6, 1995.
Dao, T., Brozek, T., Viswanathan, C.R. "A Comparison of Damage Created by Chemical Downstream Etcher and Plasma-Immersion System in MOS Capacitors," Proceedings of the Plasma Etch Users Group, 3rd International Symposium on Advanced Plasma Tools for Etching, etc., San Jose, pp. 689-696, May 1995.
Brozak, T., Li, X.-Y., Preuninger, F., Can, Y.D., Viswanathan, C.R.
"Assessment of Uniform and Non-uniform Damage
in Plasma Etched Submicron Transistors. "
1995 Proceedings of the International Symposium on VLSI Technoloov.
Systems. and Applications, Taiwan, June 2, 1995, pp. 53-56.
Brozek, T., Li, X.-Y., Can, Y.D., Preuninger, F., Viswanathan, C.R. "Evaluation of Plasma Damage using Fully Processed MOS Transistors," Proceedings of the Plasma Etch Users Group, Third International Workshop on Advanced Plasma Tools, San Jose, CA, pp. 619-629, May 1995.
Brozek, T., Hahn, D., Viswanathan, C.R. "Anomalous Degradation of MOS Structures in Substrate Hot Electron Injection Experiments," Proceedings of INFOS, 1995, Grenoble, France, pp. 337-340, June, 1995.
C.R. Viswanathan,
"Hot Carrier and Fowler-Nordheim
Stress in Sub-Micron MOS Transistors"
Physics of Semiconductor Devices, New Delhi,
pp526.
Published Abstracts
Loo, R.Y., Viswanathan, C.R. "Transport and Trapping Properties of Sapphire Substrate," Extended Abstracts, The Electrochemical Society, Fall Meeting, Las Vegas, NV, 76-2:498-499, 1976.
Roedel, R., Viswanathan, C.R., Loo, R.,
"A Model for Sodium Transport in MOS Structures,"
Extended Abstracts, Fall Meeting of the Electrochemical Society, Atlantic
City, NJ, 77-2:581-582, 1977.
T. Brozek, D. Hahn, and C. R. Viswanathan
"Anomalous Degradation of MOS Structures in Substrate
Hot Electron Injection Experiments”, Microelectronic Engineering. Vol.,
28, Nos.. 1-4. pp. 337-340, 1995.
T. Brozek, T. Dao, and C. R. Viswanathan
“A Comparison of Damage Created by Chemical Downstream Etcher and Plasma-Immersion
System in MOS Capacitors”, Journal of Vacuum Science and Technology (B),
vol.14, No.1, pp.577-581, 1996.
X. Li, T. Brozeck, Y. D. Chan, F Preiminger, and
C. R. Viswanathan,
"Evaluation of Plasma Damage Using Fully Processed
MOS Transistors",
Journal of Vacuum Science and Technology (B),
vol.14, No 1 pp.571-576, 1996.
T. Brozek and C. R. Viswanathan,
"Generation of Hole Traps in Thin Silicon Oxide Layers under High-Field
Electron Injection",
Appl. Phys Lett., vol. 68, No.13, pp.1826-28, 1996.
T. Brozek, Y. D. Chan, and C. R. Viswanathan,
"Temperature Accelerated Gate Oxide Degradation
Under plasma-Induced Charging",
IEEE Electron Dev. Lett., vol.17, No.6, pp.288-290,
1996.
T. Brozek, Y. D. Chan, and C. R. Viswanathan,
"Hole Trap Generation in the Gate Oxide due to Plasma-Induced Charging”,
IEEE Electron Dev. Lett, vol.17, No.9, pp.444-442, 1996.
T. Brozek and C. R. Viswanathan,
"Simple Method for Evaluating Process-Induced
Chairing Damage in MOS Devices",
Appl. Phys. Lett., vol.69, No.12, pp. l770-l772,
1996.
T. Brozek, Y. D. Chan, and C. R. Viswanathan,
"Threshold Voltage Degradation in Plasma-Damaged CMOS Transistors -
Role of Electron and Hole Traps Related to Charging Damage",
Microelectronics and Reliability, vol.36, No.11/12, pp.1627-1630, 1996.
T, Brozek, E. C. Szyper. and C. R. Viswanathan.
"Polarity Dependence of Cumulative Properties
of Charge-to-Breakdown of Very Thin Oxides",
Solid State Electronics 1997, in print
T. Brozek, Y. D. Chan, and C. R. Viswanathan,
"Gate Oxide Leakage Due to Temperature Accelerated Degradation under
Plasma Charging Conditions", Microelectronics and Reliability. 1997, in
Print
T. Brozek, Y. D. Chan, and C. R. Viswanathan,
"Assessment of Uniform and Non-uniform Damage
in Plasma Etched Submicron Transistors",
Proc. of the 1995 International Symposium on
VLSI techno1ogy Systems, and Application, Tai-pei, Taiwan, May 31- 3une
2, 1995, pp. 53-56.
T. Brozek, D. Hahn, and C. IL Viswanathan,
"Anomalous Degradation of MOS Structures in Substrate Hot Electron
Injection Experiments"
Proc. of the INFOS'95 Conference1 Grenoble, June 7-10,1995, pp.337-340.
T. Brozek, Y. D. Chan, and C. R. Viswanathan,
"Plasma Etching Induced Gate Oxide leakage",
Proc. of the 25th European Solid State Dev. Res.
Conf. ESSDERC '95, Hague, Netherlands, Sept.1995, pp.255-258.
T. Brozek, E. C. Szyper, and C. R. Viswanathan,
"Polarity Dependence of Cumulative Properties of Charge-to-Breakdown
of Very Thin Oxides", Abstracts of the 7th ESPRIT' Workshop on Dielectrics
in Microelectronics. Ammoudara, Crete, Greece, Nov. 22-24, 1995, paper
1.2.
V. Prabbakar, T. Brozek, Xiau-yu Li,Y. D Chan,
and C. R. Viswanathan,
"Plasma Charging Damage Studies Using Fully Processed
MOS Transistors",
Proc. of the 5th Int. Symp. on the Physical and
Failure Analysis of Integrated Circuits -WFA'95,Singapore, 27 Nov. - 1
Dec.1995, pp..
T. Brozek, B. C. Szyper, and C. R. Viswanathan,
"The Effect Of Stress Polarity on Cumulative Character of Oxide Wear-Out
under High-Field Injection", Abstracts of the 26th IEEE Semiconductor Interface
Specialists Conference, Charleston, South Carolina, Dec. 7-9, 1995, P 14.
T. Brozek, Y. D. Chan, and C. R. Viswanathan,
"Role of Temperature in Process-Induced Charging
Damage in Sit-micron CMOS Transistors",
Technical Digest of the 1995 IEEE International
Electron Devices Meeting, Washington, DC, Dec. 10-13, 1995, pp.311-314.
V. Prabhakar, T. Brozek, Y. D. Chan, and C. R. Viswanathan,
"LDD charge Pumping - Direct Measurement of Interface States in the
Overlap Region",
Technical Digest of the 1995 IEEE International Electron Devices Meeting,
Washington DC, Dec. 10-13, 1995, pp.45-43.
V. Prabhakar, T. Brozak, Y. D. Chan, and C. R.
Viswanathan,
"Measurement of Interface States in the LDD Region
of a MOS Transistor Using a Modified Charge Pumping Technique",
Proc. of the 1996 Int. Conf. on Microelectronic
Test Structures ICMTS'96, Trento (Italy), March 25-28, 1996, pp.87-90.
T. Brozek, Y. D. Chan, and C. R. Viswanathan,
"Generation of Hole traps in Silicon Dioxide under Fowler-Nordheim
Stress",
presented at the 1996 Material Research Society Spring Meeting, San
Francisco April 8-12, 1996. (Abstracts, L5.4, p.210)
Symposium Proceedings of Materials Research Society, Vol. 428 (ed. W.F.
Filter, J.J. Clement, A. S. Oates, R. Rosenberg, P. Lenahan), 1996, pp.
317-322.
T. Brozeck, Y. D. Chan, and C. R. Viswanathan,
"Role of Test Stress Levels in Detection of Process-Induced
Latent Charging Damage in MOS Transistors", Proc. of the 1st Int. Symp.
on Plasma Process-Induced Damage, Santa Clara, May 1996, pp.81-83.
V. Prabhakar, T. Brozek, J. Werking, Y. D. Chan, and C. R. Viswanathan,
"Oxide modification near gate edges due to plasma etching of
poly-Si gate in Submicron
MOSFET",
Proc. of the 1st Int. Symp. on Plasma Process-Induced Damage, Santa
Clara, May 1996, pp.177-
180.
T. Brozek, Y. D. Chan, and C. R. Viswanathan,
“Threshold Voltage Degradation Plasma-Damaged
CMOS Transistors –Role of Electron and Hold Traps
Related to Charging Damage”,
7th Europe. Symp. On Reliability of Electron
Devices, Failure Physics and Analysis
ESREF ’96, Ensheda, The Netherlands, Oct. 8-11,
1996.
T. Brozek, Y. D. Chan, and C. R. Viswanathan,
"Enhanced Hole Trapping in MOS Devices Damaged by Plasma-Induced Charging",
26th European Solid State Dev. Res. Cant ESSDERC '96, Bologna,
Italy. Sept. 9-11, 1996, pp.365-368.
T. Brozek, A. Sridharan, J. Werking, Y. D. Chan,
and C. R. Viswanathan,
"Localized Charge Injection in the Gate Oxide
over Gate-Drain Overlap Region: Mechanism, Device Dependence, and Application
for Device Diagnostics”,
Technical Digest of the 1996 IEEE International
Electron Devices Meeting, San Francisco, Dec. 9-11,1996, pp. 869-872.
T. Brozek, A. Sridharan, J. Werking, S. Anderson, Y. D. Chan, and C.
R. Viswanathan,
“GIDL - Induced Charge injection far Characterization of Plasma Edge
Damage in CMOS Devices", Proc. of the IEEE Int. Conf. on Microelectronic
Test Structures (vol. 10), Monterey, March 17-20, 1997, pp.99-104.
T. Brozek, E. B. Lum, and C. R. Viswanathan,
"Characterization
of Hole Traps Generated In Thin SiO2 Films By Electron Injection.",
Presented at Materials Research Society 1997
Spring Meeting, San Francisco, April 14,1997, Proc. Mat. Res. Soc.,
1997.
T. Brozek, E. B. Lum, and C. R. Viswanathan,
"Oxide Thickness Dependence of Hole Trap Generation in MOS structures
under High-Field Electron Injection", Proc. of the INFOS Conf., Goeteborg,
Sweden, June 1997.
A. Sridharan, J. Oh, J. Werking, T. Brozek, and
C. R. Viswanathan
”Leakage Current Due to Plasma-Induced Damage
in Thin Gate Oxide MOS Transistors",
2nd International Symposium an Plasma Process-
Induced Damage PPID' 97, Monterey, May 13-14, 1997.
A. Sridharan, T. Brozek, S. Werking, and C. R. Viswanathan,
“Investigation of Edge Damage Using Localized Charge Injection",
2nd International Symposium on Plasma Process-Induced Damage
PPID' 97, Monterey, May 13-14, 1997.
T.Brozek, V. Ramgopal Rao, A.Sridharan,
J. Werking, D.Chan, and C.R.Viswanathan, "GIDL-Induced Charge Injection
for Characterization of Plasma Edge Damage in CMOS Devices". IEEE
Transactions on Semiconductor Manufacturing , vol 11, no. 2, May 1998.
Anand Sridharan, V.Ramgopal Rao, Tomasz Brozek, J. Werking, and C.R.Viswanathan,
"Charge Injection using Gate-Induced-Drain-Leakage
Current for Characterization of Plasma Edge Damage in CMOS Devices.
",
Technical Digest, p. 560, 27 th European Solid-State
Device Research Conference (ESSDERC), Stuttgart, Germany, September,
1997
C.R.Viswanathan, V.Ramgopal Rao and T.Brozek, "Localized Charge Injection-A Tool to Investigate Plasma Damage in CMOS Devices" (invited) Proceedings of the 9 th International Conference on Physics of Semiconductor Devices, December, 1997, New Delhi, India.
V. Ramgopal Rao, G. Wijeratne, D. Chu, T. Brozek, and C.R. Viswanathan,
“Plasma Process Induced Abnormal 1/f
Noise Behavior in Deep Sub-Micron MOSFETs”,
3 rd International Symposium on Plasma Process-Induced Damage, Hawaii,
June, 1998.
V. Ramgopal Rao, W.Hansch, I.Eisele, D.K.Sharma, J.Vasi, J.C.S.Woo and C.R.Viswanathan, “Low Temperature-High Pressure Grown Thin Gate Dielectrics for MOS Applications”, Solid-State Device and Materials Research (SSDM) Conf, Hiroshima, 1998
R. Sachdev, G. Wijeratne, V. Ramgopal Rao, and C.R.Viswanathan, “A study of the effect of Plasma Damage on Sub-micron MOSFET’s Flicker Noise Properties”, Technical Digest, 28 th European Solid-State Device Research Conference (ESSDERC), Bordeaux, France, September, 1998
C.R.Viswanathan and V. Ramgopal Rao, “Application of Charge Pumping
Technique for sub-micron MOSFET
Characterization” To appear in Microelectronic Engineering,
1998