Publications & Presentations
Publications | Presentations | Patents
Publications
Bottom-up Photonic Crystal Cavities Formed by Patterned III-V Nanopillars
A.C. Scofield, J.N. Shapiro, A. Lin, A.D. Williams, P.S. Wong, B.L. Liang, and D.L. Huffaker
Nano Letters, 11(6), 2242, (2011)
Patterned Radial GaAs Nanopillar Solar Cells
G. Mariani, P.S. Wong, A.M. Katzenmeyer, F. Leonard, J.N. Shapiro, D.L. Huffaker
Nano Letters, 11(6), 2490, (2011)
Lateral interdot carrier transfer in InAs quantum dot cluster grown on pyramidal GaAs surface
B.L. Liang, P.S. Wong, N. Pavarelli, J. Tatebayashi, T.J. Ochalski, G. Huyet, D.L. Huffaker
Nanotechnology, 22(5), 055706 (2011)
Enhanced Properties in Single-Walled Carbon Nanotubes based Saturable Absorber for All Optical Signal Regeneration
H. Nong, M. Gicquel, L. Bramerie, M. Perrin, F. Grillot, R. Fleurier, B.L. Liang, D.L. Huffaker, C. Levallois, J. Le Pouliquen, A. Le Corre, O. Dehaese, S. Loualiche
Jpn. J. Apply. Phys. 50 (2011) 040206
Self-catalyzed vapor-liquid-solid growth of wurtzite InP/InAsP core-shell nanopillars
B.L. Liang, J. Tatebayashi, S. Kodambaka, D.L. Huffaker, R.F. Hicks
Journal of Crystal Growth, 314(1) 34-38 (2011)
InAs quantum dots on nanopatterned GaAs (001) surface: the growth, optical properties, and device implementation
P.S. Wong, B.L. Liang, and D.L. Huffaker
Journal of Nanoscience and Nanotechnology 10(3) 1537-1550 (2010)
Controlled Formation and Dynamic Wulff Simulation of Equilibrium Crystal Shapes of GaAs Pyramidal Structures on Nanopatterned Substrates
P.S. Wong, B.L. Liang, R. Molecke, J. Tatebayashi, D.L. Huffaker
Crystal Growth & Design, 10(6), 2509-2514 (2010)
Optical characteristics of GaInP/GaP double-heterostructure core-shell nanowires embedded in polydimethylsiloxane membranes
J. Tatebayashi, G. Mariani, A. Lin, R.F. Hicks, and D.L. Huffaker
Appl. Phys. Lett., 96 253101 (2010)
Hybrid Conjugated Polymer Solar Cells using Patterned GaAs Nanopillars
G. Mariani, R.B. Laghumavarapu, Bertrand Tremolet de Villers, J.N. Shapiro, P.N. Senanayake, Andrew Lin, Benjamin J. Schwartz and D.L. Huffaker
Appl. Phys. Lett., 97 013107 (2010)
Visible Light Emission from Self-Catalyzed GaInP/GaP Core-Shell Double Heterostructure Nanowires on Silicon
J. Tatebayashi, A. Lin, P.S. Wong, R. F. Hicks, and D.L. Huffaker
J. Appl. Phys. 108, 034315 (2010)
Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: Control of type I to type II transition
J. He, C. J. Reyner, B.L. Liang, K. Nunna, D.L. Huffaker,, N. Pavarelli, K. Gradkowski, T. J. Ochalski, G. Huyet, V. G. Dorogan, Y. I. Mazur, G. J. Salamo
Nano Letters, 10, 3052, (2010)
Coulomb effect inhibiting spontaneous emission in charged quantum dot
N. Pavarelli, K. Gradkowski, T. J. Ochalski, G. Huyet, B.L. Liang, D.L. Huffaker
Appl. Phys. Lett., 97 091105 (2010)
1.52-µm Photoluminescence Emissions from InAs Quantum Dots Grown on Nanopatterned GaAs Buffers
P.S. Wong, B.L. Liang, A. Lin, J. Tatebayashi, and D.L. Huffaker
Appl. Phys. Lett., 97 143111 (2010)
InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy
J.N. Shapiro, A. Lin, A.C. Scofield, C. Tu, P.S. Wong, P.N. Senanayake, G. Mariani, B.L. Liang, D.L. Huffaker
Appl. Phys. Lett., 97 243102 (2010)
Photoconductive Gain in Patterned Nanopillar Photodetector Arrays
P.N. Senanayake, A. Lin, G. Mariani, J.N. Shapiro, C. Tu, A.C. Scofield, P.S. Wong, B.L. Liang, D.L. Huffaker
Appl. Phys. Lett., 97 203108 (2010)
Poole-Frenkel Effect and Phonon-Assisted Tunneling in GaAs Nanowires
A.M. Katzenmeyer, F. Leonard, A.A. Talin, P.S. Wong, and D.L. Huffaker
Nano Letters, 10(12) 4935-4938 (2010)
Formation and optical characteristics of type-II strain-relieved GaSb/GaAs quantum dots by using an interfacial misfit growth mode
H. Huang, G. Balakrishnan, V. Klimov, L.R. Dawson, and D.L. Huffaker
IEEE Trans. on Nanotech. 8(2) 269 (2009)
Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices
J. Tatebayashi, N. Nuntawong, P.S. Wong, Y.C. Xin, L.F. Lester, and D.L. Huffaker
Journal of Physics. D: Applied Physics 42, 073002 (2009)
Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut SI Substrates
J. Tatebayashi, A. Jallipalli, M.N. Kutty, S.H. Huang, K. Nunna, G. Balakrishnan, L.R. Dawson, D.L. Huffaker
IEEE Journal of Selected Topics in Quantum Electronics, 15(3) 716, (2009).
Structural analysis of highly relaxed GaSb grown on GaAs substrates with periodic interfacial array of 90o misfit dislocations
A. Jallipalli, G. Balakrishnan, S.H. Huang, T.J. Rotter, K. Nunna, B.L. Liang, L.R. Dawson, and D.L. Huffaker
Nano. Res. Lett., 4(12), 1458-1462 (2009)
Compensation of interfacial states located inside the "buffer-free" GaSb/GaAs (001) heterojunction via δ-doping
A. Jallipalli, K. Nunna, M.N. Kutty, G. Balakrishnan, G.B. Lush, L.R. Dawson, and D.L. Huffaker
Appl. Phys. Lett., 95 072109 (2009)
Electronic characteristics of interfacial states embedded in the "buffer-free" GaSb/GaAs (001) heterojunctions
A. Jallipalli, K. Nunna, M.N. Kutty, G. Balakrishnan, L.R. Dawson, and D.L. Huffaker
Appl. Phys. Lett., 95 202107 (2009)
GaSb/GaAs type-II quantum dots grown by droplet epitaxy
B.L. Liang, Andrew Lin, Nicola Pavarelli, Charles Reyner, Jun Tatebayashi, Kalyan Nunna, Jun He, Tomasz J. Ochalski, Guillaume Huyet, D.L. Huffaker
Nanotechnology, 20(45) 455604 (2009)
Fabrication and characteristics of broad-area light-emitting diode based on nanopatterned quantum dots
P.S. Wong, B.L. Liang, J. Tatebayashi, L. Xue, N. Nuntawong, M.N. Kutty, S. R. J. Brueck, and D.L. Huffaker
Nanotechnology, 20 035302 (2009)
Continuous-wave lasing at room-temperature of 2-µm Sb-based optically-pumped VECSELs monolithically grown on GaAs substrates
T.J. Rotter, J. Tatebayashi, P. Senanayake, M. Rattunde, J. Wagner, G. Balakrishnan, L.R. Dawson, and D.L. Huffaker
Appl. Phys. Express. 2, 112102 (2009)
Interfacial misfit array formation for GaSb growth on GaAs
Shenghong Huang, Ganesh Balakrishnan, and D.L. Huffaker
J. Appl. Phys. 105, 103104 (2009)
Self-Catalyzed Epitaxial Growth of Vertical Indium Phosphide Nanowires on Silicon
L. Gao, R.L. Woo, B.L. Liang, M. Pozuelo, S. Prikhodko, M. Jackson, N. Goel, M.K. Hudait, D.L. Huffaker, M.S. Goorsky, S. Kodambaka, and R.F. Hicks
Nano Lett. 9(6), 2223-2228 (2009)
Optical transition pathways in type-II Ga(As)Sb quantum dots
K. Gradkowski, T.J. Ochalski, D.P. Williams, J. Tatebayashi, A. Khoshakhlagh, G. Balakrishnan, E.P. O'Reilly, G. Huyet, L.R. Dawson, D.L. Huffaker
J. of Luminescence 129, 456 (2009)
Coulomb effects in type-II Ga(As)Sb quantum dots
K.Gradkowski, T.J. Ochalski, D.P. Williams, S.B. Healy, J. Tatebayashi, G. Balakrishnan, E.P. O'Reilly, G. Huyet, and D.L. Huffaker
Phys. Status Solidi B 246 (4), 752 (2009)
Complex emission dynamics of type-II GaSb/GaAs quantum dots
K. Gradkowski, N. Pavarelli, T.J. Ochalski, D.P. Williams, J. Tatebayashi, G. Huyet, E.P. O'Reilly, D.L. Huffaker
Appl. Phys. Lett., 95 061102 (2009)
Strain-compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices
J. Tatebayashi, N. Nuntawong, P.S. Wong, Y.C. Xin, L.F. Lester, and D.L. Huffaker
J. Physics D, 42, 073002 (2009)
Record pulsed power demonstration of a 2 µm GaSb-based opticaly pumped semiconductor laser grown lattice-mismatched on an AlAs/GaAs Bragg mirror and substrate
J.M. Yarborough, Y.Y. Lai, Y. Kaneda, J. Hader, J.V. Moloney, T.J. Rotter, G. Balakrishnan, C. Hains, D.L. Huffaker, S.W. Koch, and R. Bedford
Appl. Phys. Lett., 95 081112 (2009)
Self-Organized Formation of GaSb=GaAs Quantum Rings
Phys. Rev. Lett. 101(25) 256101 (2008)
Electrical and structural characterization of a single GaSb/InAs/GaSb quantum well grown on GaAs using interface misfit dislocation
K.G. Eyink, A. Jallipalli, G. Balakrishnan, D.L. Huffaker, D.H. Tomich, W.C. Mitchel, L. Grazulis, J.A. Carlin, K. Mahalingam, and S. Elhamri
Journ. Appl. Phys. 104, 074901 (2008)
Quantum ring formation and antimony segregation in GaSb/GaAs nanostructures
R. Timm, A. Lenz, H. Eisele, L. Ivanova, M. Dähne, G. Balakrishnan, D.L. Huffaker, I. Farrer and D. A. Ritchie
J. Vac. Sci. Technol. B 26(4) 1492 (2008)
ISI times cited: 1
Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate
S.H. Huang, G. Balakrishnan, A. Khoshakhlagh, P. Li, L.R. Dawson and D.L. Huffaker
Appl. Phys. Lett., 93 071102 (2008)
Device characteristics of GaInSb/AlGaSb quantum well lasers monolithically grown on GaAs substrates by using an interfacial misfit arra
J. Tatebayashi, A. Jallipalli, M.N. Kutty, S.H. Huang, T.J. Rotter, G. Balakrishnan, L.R. Dawson, and D.L. Huffaker
J. Electronic Materials 37 1758 (2008)
Fabrication of Self-aligned Enhancement-mode In0.53Ga0.47As
D. Shahrjerdi, T. Rotter, G. Balakrishnan, D.L. Huffaker, E. Tutuc and S.K. Banerjee
IEEE Electron. Dev. Lett., 29, 6 (2008)
Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure
P.S. Wong, B.L. Liang, V. G. Dorogan, A.R. Albrecht, J. Tatebayashi, X. He, N. Nuntawong, Y.I. Mazur, G.J. Salamo, S.R.J. Brueck, and D.L. Huffaker
Nanotechnology, 19(43), 435710 (2008)
Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in InGaAs quantum well
J. Tatebayashi, B.L. Liang, R.B. Laghumavarapu, D.A. Bussian, H. Htoon, V. Klimov, G. Balakrishnan, L.R. Dawson, and D.L. Huffaker
Nanotechnology, 19(29), 295704 (2008)
Faceting of a quasi-two-dimensional GaAs crystal in nanoscale patterned growth
S.C. Lee, D.L. Huffaker, and S.R.J. Brueck
Applied Physics Letters, vol. 92, pp. 023103-1-3 (2008)
Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers
R.B. Laghumavarapu, M. El-Emawy, N. Nuntawong, A. Moscho, L.F. Lester, and D.L. Huffaker
Applied Physics Letters, vol. 91, pp. 243115-1-3 (2007)
Optical properties of patterned InAs quantum dot ensembles grown on GaAs nanopyramids
B.L. Liang; P.S. Wong, N. Nuntawong, A. R. Albrecht, J. Tatebayashi, T.J. Rotter, G. Balakrishnan, and D.L. Huffaker
Applied Physics Letters, vol. 91, no. 24, pp.243106-1-3 (2007)
Room-temperature operation of buffer-free GaSb/AlGaSb quantum-well diode lasers developed on a GaAs platform emitting at 1.65 µm
M. Mehta, G. Balakrishnan, A. Jallapali, M.N. Kutty, L.R. Dawson, and D.L. Huffaker
Photonics Technology Letters, vol. 19, no. 20, pp. 1628-1630, October 15 2007.
1.54 µm GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays
A. Jallipalli, M.N. Kutty, G. Balakrishnan, J. Tatebayashi, N. Nuntawong, S.H. Huang, L.R. Dawson, D.L. Huffaker, Z. Mi and P. Bhattacharya
Electronics Letters, vol. 43, no. 22, October 25 2007.
Room-temperature lasing at 1.82 µm of GaInSb/AlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array
J. Tatebayashi, A. Jallipalli, M.N. Kutty, S.H. Huang, G. Balakrishnan, L.R. Dawson, and D.L. Huffaker
Applied Physics Letters, vol. 91, no. 14, pp. 1411021-3, October 2007.
Single dot spectroscopy of patterned InAs quantum dots regrown on pyramidal GaAs buffers
T. Tran, K.C. Shin, P.S. Wong, N. Nuntawong, J. Tatebayashi, D.L. Huffaker
Applied Physics Letters, vol. 91, no. 13, pp. 133104-1-3, September 26 2007.
Room temperature InGaSb quantum well microcylinder lasers at 2um grown monolithically on a silicon substrate
T. Yang, L. Lu, M.H. Shih, J.D. O'Brien, G. Balakrishnan, and D.L. Huffaker
Journal of Vacuum Science and Technology, vol. 25, September 5 2007.
Arsenic-induced etched nanovoids on GaSb (100)
S.H. Huang, G. Balakrishnan, M. Mehta, L.R. Dawson, P. Li, and D.L. Huffaker
Journal of Applied Physics, vol. 102, no. 04, pp. 044312-1-3, August 2007.
Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well
J. Tatebayashi, A. Khoshakhlagh, G. Balakrishnan, S. Huang, M. Mehta, D. A. Bussian, H. Htoon, V. Klimov, L.R. Dawson, and D.L. Huffaker
Applied Physics Letters, vol. 90, no. 26, pp. 261115-1-3, June 2007.
Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids
P.S. Wong, G. Balakrishnan, N. Nuntawong, J. Tatebayashi, and D.L. Huffaker
Applied Physics Letters, vol. 90, no. 18, pp. 183103-1-3, April 2007.
GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response
R.B. Laghumavarapu, A. Moscho, A. Khoshakhlagh, L.F. Lester, and D.L. Huffaker
Applied Physics Letters, vol. 90, no. 17, pp. 173125-1-3, April 2007.
Epitaxial growth and formation of interfacial misfit array for tensile GaAs on GaSb
S.H. Huang, G. Balakrishnan, M. Mehta, A. Khoshakhlagh, L.R. Dawson, P. Li, and D.L. Huffaker
Applied Physics Letters, vol. 90, no. 16, pp. 161902-1-3, April 2007.
Measurement of electro-optic coefficients of 1.3 µm self-assembled InAs=GaAs quantum dots
J. Tatebayashi, R.B. Laghumavarapu, N. Nuntawong, and D.L. Huffaker
Electronics Letters, vol. 43, no. 7, pp. 410-412, March 29 2007.
Localized strain reduction in strain-compensated InAs/GaAs stacked quantum dot structures
N. Nuntawong, J. Tatebayashi, P.S. Wong, and D.L. Huffaker
Applied Physics Letters, vol. 90, no. 16, pp. 163121-1-3, 2007.
Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (100) substrates
G. Balakrishnan, M. Mehta, M.N. Kutty, P. Patel, A.R. Albrecht, P. Rotella, S. Krishna, L.R. Dawson, and D.L. Huffaker
Electronics Letters, vol. 43, no. 4, February 15 2007.
Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III-V semiconductor materials
A. Jallipalli, G. Balakrishnan, S.H. Huang, A. Khoshakhlagh, L.R. Dawson, D.L. Huffaker
Journal of Crystal Growth vol. 303, no. 1-4 pp. 449-455 (2006)
Formation and optical characteristics of strain-relieved and densely stacked GaSb/GaAs quantum dots
J. Tatebayashi, A. Khoshakhlagh, S.H. Huang, L.R. Dawson, G. Balakrishnan, and D.L. Huffaker
Applied Physics Letters, 89(20) 203116 (2006)
III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs
G. Balakrishnan, J. Tatebayashi, A. Khoshakhlagh, S.H. Huang, A. Jallipalli, L.R. Dawson, and D.L. Huffaker
Applied Physics Letters, 89(16) 161104 (2006)
Ground-state Lasing of Stacked InAs/GaAs Quantum Dots With GaP Strain-compensation Layers Grown by metal organic Chemical Vapor Deposition
J. Tatebayashi, N. Nuntawong, Y.C. Xin, P.S. Wong, S. Huang, L.F. Lester and D.L. Huffaker
Applied Physics Letters, 88 221107 (2006)
Strain relief on periodic misfit arrays for low defect density GaSb on GaAs
S.H. Huang, G. Balakrishnan, A. Khoshakhlagh, A. Jallipalli, L.R. Dawson, D.L. Huffaker
Applied Physics Letters, 88(13) 131911 (2006)
Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate
G. Balakrishnan, S.H. Huang, A. Khoshakhlagh, A. Jallipalli, P. Rotella, A. Amtout, S. Krishna, C.P. Haines, L.R. Dawson and D.L. Huffaker
Electronics Letters, 42(6) 350-52 (2006)
GaSb quantum-well-based "buffer-free" vertical light emitting diode monolithically embedded within a GaAs cavity incorporating interfacial misfit arrays
M. Mehta, G. Balakrishnan, S. Huang, A. Khoshakhlagh, A. Jallipalli, P. Patel, M.N. Kutty, L.R. Dawson, and D.L. Huffaker
Appl. Phys. Lett., 89 211110 (2006)
Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition
N. Nuntawong, Y.C. Xin, S. Birudavolu, P.S. Wong, S. Huang, C.P. Hains, D.L. Huffaker
Applied Physics Letters, 86(19) 193115 (2005)
Room-temperature Optically-pumped InGaSb quantum well lasers monolithically grown on Si (100) substrate
G. Balakrishnan, S.H. Huang, A. Khoshakhlagh, P. Hill, A. Amtout, S. Krishna, G.P. Donati, L.R. Dawson, D.L. Huffaker
Electronics Letters, vol. 41, no. 9, pp. 531-532 (2005)
In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition
S. Birudavolu, S.Q. Luong, N. Nuntawong, Y.C. Xin, C.P. Hains, D.L. Huffaker
Journal of Crystal Growth vol. 277, no. 1-4 pp. 97-103 (2005)
Growth mechanisms of highly mismatched AlSb on a Si substrate
G. Balakrishnan, S.H. Huang, L.R. Dawson, Y.C. Xin, P. Conlin, D.L. Huffaker
Applied Physics Letters, vol. 86, no. 3, pp. 34105-1-3, January 17 2005
Effect on strain-compensation in stacked 1.3 µm in As/GaAs quantum dot active regions grown by metalorganic chemical vapor deposition
N. Nuntawong, S. Birudavolu, C.P. Hains, S. Huang, H. Xu, D.L. Huffaker
Applied Physics Letters, vol. 85, no. 15, pp. 3050-3052, October 11 2004
Presentations
Bottom-up Photonic Crystal Lasers Formed by III-V Nanopillars - New Platform for Integration
Dissimilar and Nanomaterials for Optoelectronic Devices
Patents
Vertical-Cavity Surface-Emitting Laser Diode Array with Wavelength Control Through Lateral Index-Confinement
US 60/020,471
In-Situ Mask Removal In Selective Area Epitaxy Using Metal Organic Chemical Vapor Deposition
Huffaker et al.
US 7,288,423 B2
Densely stacked and strain-compensated quantum dot active regions
Huffaker et al.
US 7,795,609
Hybrid integration based on wafer-bonding of devices to AlSb monolithically grown on Si
Huffaker et al.
US 7,700,395
Quantum dots nucleation layer of lattice mismatched epitaxy
Huffaker et al.
US 7,432,175
Low Threshold Microcavity Light Emitter
Deppe, Huffaker
US 6,370,179