Speaker: Alan C. Farrell
Affiliation: Ph.D. Candidate - UCLA
Physical & Wave Electronics – Department Research Forum
Abstract: Advancements in the epitaxial growth of high quality III-V semiconductors has led to the development of photodetectors operating in a wide range of infra-red (IR) wavelengths. However, the performance of many types of photodetectors is limited by the necessity for lattice-matched growth. This talk will explore the possibilities using selective-area MOCVD growth of nanowires, where lattice-matched growth is no longer a constraint, and will focus on two types of detectors: 1.5 um single photon avalanche detectors (SPADs) and extended InGaAs near-IR photodetectors. We will demonstrate that through suitable choice of material systems, without regard to lattice matching constraints, the performance of these detectors can be significantly improved.
Date(s) - Mar 09, 2016
12:00 pm - 1:00 pm
E-IV Tesla Room #53-125
420 Westwood Plaza - 5th Flr., Los Angeles CA 90095